Zhengcheng Wen

Dr. Zhengcheng Wen


Research Focus & Metrics

Academic Career Length

14Years (2013-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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18 June 2019 in Energy & Fuels
Verified
Journal Article
Closed access
ZWZhengcheng Wen
Zhengcheng Wen
HSHongzhe Shen
Hongzhe Shen
YLYuan Li
Yuan Li
Zhihua WangZhihua Wang
Zhihua Wang
GWGuangqin Wang
Guangqin Wang
KCKefa Cen
Kefa Cen

10 November 2021 in Physical Review B
Verified
Journal Article
Closed access
PDF file
FWFei Wan
Fei Wan
XWXinru Wang
Xinru Wang
YGYawen Guo
Yawen Guo
JZJiayan Zhang
Jiayan Zhang
ZWZhengcheng Wen
Zhengcheng Wen
YLYuan Li
Yuan Li
By using the tight-binding model and nonequilibrium Green's function method (NEGF), we study the band structures and transport properties of a silicene nanoribbon with a line defect where a bulk energy gap is opened due to the sublattice symmetry breaking. The flat subband bends downwards or upwards due to the effect of the line defect. The spin-orbit coupling induces the quantum spin Hall states. Especially, the energy band depends on the distance between the line defect and the edge of the nanoribbon. The effects of the on-site energies on the band spectra of the two defect configurations are different. There always exists one band gap for different on-site energies for the defect configuration of case 1. However, a gapless state and a band gap can be modulated by changing the on-site energy, the sublattice potential, and spin-orbit couplings for the defect configuration of case 2. Accordingly, the variation trends of the conductance including zero conductance can be well understood in terms of the combined effect of the sublattice potential, the on-site energy, and spin-orbit couplings on the band structures. Thus it is easy and effective to modulate the transport property of the silicene nanoribbon with the defect configuration of case 2 by utilizing the sublattice potential, the on-site energy, and spin-orbit couplings. This study is of great significance for the fabrication and the modulation of the transport property of silicene-based devices.

24 January 2018 in Arabian Journal for Science and Engineering
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Journal Article
Closed access
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ZWZhengcheng Wen
Zhengcheng Wen
WCWeiyin Chen
Weiyin Chen
YLYuan Li
Yuan Li
JXJiangrong Xu
Jiangrong Xu

22 June 2017 in Ozone: Science & Engineering
Verified
Journal Article
Closed access
ZWZhengcheng Wen
Zhengcheng Wen
Zhihua WangZhihua Wang
Zhihua Wang
YLYuan Li
Yuan Li
KCKefa Cen
Kefa Cen
The mechanism and kinetics of the elemental Hg oxidation in flue gas by ozone injection are investigated in detail by using quantum chemistry, kinetic simulation and experimental research. The reaction processes, activation energies and kinetic parameters are calculated and analyzed by quantum chemistry. From the comparison of activation energies, the Hg0 oxidation ability of oxidizing radicals is that: NO3>O3>NO2. The calculated results are in good agreement with literature experimental results. The calculated kinetic parameters are employed for kinetic simulation. The results of kinetic simulation are in good agreement with the experimental results. Results show that, the Hg0 oxidization increases linearly when the mole ratio of O3/NO becomes larger or the reaction temperature becomes higher. The reaction Hg+NO3 = NO2+HgO is the key elemental reaction and the concentration of NO3 is the most important factor for affecting Hg0 oxidation.

1 July 2013 in Chemosphere
Verified
Journal Article
Closed access
ZWZhengcheng Wen
Zhengcheng Wen
Zhihua WangZhihua Wang
Zhihua Wang
JXJiangrong Xu
Jiangrong Xu
YLYang Liu
Yang Liu
KCKefa Cen
Kefa Cen

4 November 2022 in Propellants, Explosives, Pyrotechnics
Verified
Journal Article
Closed access
ZWZhengcheng Wen
Zhengcheng Wen
XZXiang Zhao
Xiang Zhao
HLHeping Li
Heping Li
XHXuefeng Huang
Xuefeng Huang
FWFang Wang
Fang Wang
MFMuye Feng
Muye Feng