This page has only limited features, please log in for full access.

Unclaimed
Yi-Lung Cheng
Department of Electrical Engineering, National Chi-Nan University, 1, University Rd. Puli, Nan-Tou, Taiwan, R.O.C, 54561, TAIWAN

Basic Info

Basic Info is private.

Honors and Awards

The user has no records in this section


Career Timeline

The user has no records in this section.


Short Biography

The user biography is not available.
Following
Followers
Co Authors
The list of users this user is following is empty.
Following: 0 users

Feed

Journal article
Published: 10 June 2021 in ECS Journal of Solid State Science and Technology
Reads 0
Downloads 0
ACS Style

Yi-Lung Cheng; Wei-Fan Peng; Chih-Yen Lee; Giin-Shan Chen; Ying-Ning Lin; Jau-Shiung Fang. Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization. ECS Journal of Solid State Science and Technology 2021, 1 .

AMA Style

Yi-Lung Cheng, Wei-Fan Peng, Chih-Yen Lee, Giin-Shan Chen, Ying-Ning Lin, Jau-Shiung Fang. Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization. ECS Journal of Solid State Science and Technology. 2021; ():1.

Chicago/Turabian Style

Yi-Lung Cheng; Wei-Fan Peng; Chih-Yen Lee; Giin-Shan Chen; Ying-Ning Lin; Jau-Shiung Fang. 2021. "Electrical and Reliability Perspectives for Self-Forming Barrier CuSc Metallization." ECS Journal of Solid State Science and Technology , no. : 1.

Journal article
Published: 01 June 2021 in ECS Journal of Solid State Science and Technology
Reads 0
Downloads 0
ACS Style

Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang; Yi-Lung Cheng. Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film. ECS Journal of Solid State Science and Technology 2021, 10, 063005 .

AMA Style

Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang, Yi-Lung Cheng. Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film. ECS Journal of Solid State Science and Technology. 2021; 10 (6):063005.

Chicago/Turabian Style

Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang; Yi-Lung Cheng. 2021. "Effects of Cu Metal Barrier on Electrical Characteristics of Porous Carbon-Doped Oxide Film." ECS Journal of Solid State Science and Technology 10, no. 6: 063005.

Journal article
Published: 29 March 2021 in Journal of The Electrochemical Society
Reads 0
Downloads 0

Nanoscale cobalt interconnection wire has a lower mean free path of electrons to reduce the electrical resistivity, therefore it has been increasingly studied as a promising interconnect material to replace the conventionally used copper in state-of-the-art nanoscale devices. This process further limits the space for barrier/seed layer deposition to conformally fill the narrow trenches/contact holes in nanoscale devices. Thus, an electrochemical approach not involving a conventional high-resistivity barrier is presented to study the gap-filling capability and properties of Co(P) films with a controlled composition on a NiSi substrate. Examining electrodeposited Co(P) films reveals that the composition is determined mainly by the deposition potential instead of the amount of NaH2PO2 in the electrolytes, yielding a film with a phosphorous concentration lower than 2.62 at.%. The lightly doped Co(P) film has an hexagonal close-packed Co structure with phosphorous atoms at the interstitial lattice site. A chronoamperometry study on the current transient during the electrochemical deposition indicates that NaH2PO2 addition can enhance the deposition of the Co(P) films. Hence, the Co(P) film developed here is capable of gap filling nanoscale trenches up to an aspect ratio of 5 and is practical as a contact plug material for NiSi in nanoscale devices.

ACS Style

Jau-Shiung Fang; Yu-Lin Wu; Yi-Lung Cheng; Giin-Shan Chen. Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects. Journal of The Electrochemical Society 2021, 1 .

AMA Style

Jau-Shiung Fang, Yu-Lin Wu, Yi-Lung Cheng, Giin-Shan Chen. Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects. Journal of The Electrochemical Society. 2021; ():1.

Chicago/Turabian Style

Jau-Shiung Fang; Yu-Lin Wu; Yi-Lung Cheng; Giin-Shan Chen. 2021. "Synthesis of Dilute Phosphorous-Embedded Co Alloy Films on a NiSi Substrate with a Superior Gap-Filling Capability for Nanoscale Interconnects." Journal of The Electrochemical Society , no. : 1.

Journal article
Published: 09 March 2021 in Coatings
Reads 0
Downloads 0

Plasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-k) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-k materials by Hexamethyldisilazane (HDMS) plasma treatment. For a plasma-damaged porous low-k material, its surface hydrophilic state was transformed to hydrophobic state by HDMS plasma treatment, revealing that damage was repaired. Simultaneously, a dielectric film was capped onto the porous low-k material, and displayed better barrier capability against Cu migration. Additionally, the breakdown reliability of the stacked dielectric was enhanced by the means of HDMS plasma treatment. The optimized HDMS plasma treatment time was found to be 10 s. Therefore, this proposed HDMS plasma treatment processing is a promising technique for highly applicable low-k material used for advanced technology nodes.

ACS Style

Chih-Yen Lee; Chi-Yang Yan; Yi-Lung Cheng. In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment. Coatings 2021, 11, 314 .

AMA Style

Chih-Yen Lee, Chi-Yang Yan, Yi-Lung Cheng. In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment. Coatings. 2021; 11 (3):314.

Chicago/Turabian Style

Chih-Yen Lee; Chi-Yang Yan; Yi-Lung Cheng. 2021. "In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment." Coatings 11, no. 3: 314.

Journal article
Published: 28 February 2021 in Sustainability
Reads 0
Downloads 0

It is estimated that 1 billion waste tires are generated every year across the globe, yet only 10% are being processed, and much rubber waste is yielded during manufacturing. These waste tires and rubber scraps are poisonous to the environment when processed via incineration and landfill. Rubber circular manufacturing is an effective solution that reduces not only rubber waste but also raw material costs. In this paper we propose a two-line flowshop model for the circular rubber manufacturing problem (CRMP), where the job sequence of two production lines is appropriately aligned to obtain the shortest makespan while guaranteeing that sufficient rubber waste yielded in the first line is ready to be reused for circular production in the second line. A genetic algorithm (GA) is developed, and the design of its genetic operations is customized to the CRMP context to achieve efficient and effective evolution. The experimental results with both real and synthetic datasets show that the GA significantly surpasses two heuristics in the literature by delivering the minimum makespan, which is 3.4 to 11.2% shorter than those obtained by the two competing methods.

ACS Style

Peng-Yeng Yin; Hsin-Min Chen; Yi-Lung Cheng; Ying-Chieh Wei; Ya-Lin Huang; Rong-Fuh Day. Minimizing the Makespan in Flowshop Scheduling for Sustainable Rubber Circular Manufacturing. Sustainability 2021, 13, 2576 .

AMA Style

Peng-Yeng Yin, Hsin-Min Chen, Yi-Lung Cheng, Ying-Chieh Wei, Ya-Lin Huang, Rong-Fuh Day. Minimizing the Makespan in Flowshop Scheduling for Sustainable Rubber Circular Manufacturing. Sustainability. 2021; 13 (5):2576.

Chicago/Turabian Style

Peng-Yeng Yin; Hsin-Min Chen; Yi-Lung Cheng; Ying-Chieh Wei; Ya-Lin Huang; Rong-Fuh Day. 2021. "Minimizing the Makespan in Flowshop Scheduling for Sustainable Rubber Circular Manufacturing." Sustainability 13, no. 5: 2576.

Journal article
Published: 01 February 2021 in ECS Journal of Solid State Science and Technology
Reads 0
Downloads 0
ACS Style

Jau-Shiung Fang; Tzu-Ming Yang; Yi-Lung Cheng; Giin-Shan Chen. (3-Aminopropyl)trimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization. ECS Journal of Solid State Science and Technology 2021, 10, 023003 .

AMA Style

Jau-Shiung Fang, Tzu-Ming Yang, Yi-Lung Cheng, Giin-Shan Chen. (3-Aminopropyl)trimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization. ECS Journal of Solid State Science and Technology. 2021; 10 (2):023003.

Chicago/Turabian Style

Jau-Shiung Fang; Tzu-Ming Yang; Yi-Lung Cheng; Giin-Shan Chen. 2021. "(3-Aminopropyl)trimethoxysilane Self-Assembled Monolayer as Barrier of Porous SiOCH for Electroless Cu Metallization: Optimizations of SiOCH Hydroxylation and Monolayer Functionalization." ECS Journal of Solid State Science and Technology 10, no. 2: 023003.

Journal article
Published: 17 November 2020 in Materials Chemistry and Physics
Reads 0
Downloads 0

TaN/Ta bilayer is the standard barrier for the metallization of copper interconnects of current integrated circuit devices. However, thickness reduction of the barrier becomes a major bottleneck for the successful metallization of the downsizing copper interconnects in sub-7-nm technology nodes. Hence, the feasibility of a mercaptosilane self-assembled monolayer (SAM) as a barrier, as well as a seed adsorber for electroless copper metallization, is investigated. The mercaptosilane SAM after proper functionalization in a RCA-1 aqueous solution has the capacity to adsorb 3-nm-sized nickel particles, subsequently catalyzing the plating of extremely dilute Cu(Co) films with only 0.13 at.% of Co. Using the adhesion strength (13.1 MPa) and threshold temperature for thermal failure (450°C) of pristine Cu/SiO2 as a control, Cu/SAM/SiO2 (pristine state) yields markedly enhanced adhesion strength and threshold temperature of 39.4 MPa and 500°C, respectively. Cu(Co)/SAM/Cu exhibits even a much higher adhesion of 53.8 MPa (pristine state) and 74.6 MPa (annealed state). Seeding of the nickel particles by the functionalized mercaptosilane monolayer is clarified from the viewpoints of solution chemistry and proton exchange mechanism, and why only a tiny amount of cobalt is incorporated onto copper matrix is explained. The synergetic effect of the mercaptosilane monolayer embedding and extreme dilution of cobalt alloying on enhancing the adhesion and thermal stability of copper films is discussed considering the context of previous studies.

ACS Style

Giin-Shan Chen; Wan-Ling Gao; Chin-Chia Chang; Jau-Shiung Fang; Yi-Lung Cheng. Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier. Materials Chemistry and Physics 2020, 259, 124034 .

AMA Style

Giin-Shan Chen, Wan-Ling Gao, Chin-Chia Chang, Jau-Shiung Fang, Yi-Lung Cheng. Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier. Materials Chemistry and Physics. 2020; 259 ():124034.

Chicago/Turabian Style

Giin-Shan Chen; Wan-Ling Gao; Chin-Chia Chang; Jau-Shiung Fang; Yi-Lung Cheng. 2020. "Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier." Materials Chemistry and Physics 259, no. : 124034.

Journal article
Published: 21 August 2020 in ECS Journal of Solid State Science and Technology
Reads 0
Downloads 0

In this study, effects of ultraviolet (UV)-assisted thermal curing on a SiCN/SiCOH stacked dielectric were investigated. Post UV-assisted thermal curing on the SiCN/porous SiOCH stacked dielectric improved the hardness, adhesion, electrical characteristics, and reliability. However, it did not impose any improvement on the SiCN/SiOCH stacked dielectric in the case of without UV-assisted thermal curing on the as-deposited porogen-contained SiOCH dielectrics. Carbon residues resulted from porogen precursor remained in the dielectric stack because the SiCN capping film stopped the diffusion-out. Additionally, Cu barrier capacity of SiCN/porous SiOCH stacked dielectrics under an annealing at 450oC was not degraded by UV-assisted thermal curing. Consequently, this study proposes a promising UV-assisted thermal curing processing to enhance reliability for a dielectric stack with a porous low-k SiOCH dielectric and a SiCN capping barrier.

ACS Style

Professor Yi-Lung Cheng; Yu-Lu Lin; Professor Giin-Shan Chen; Professor Jau-Shiung Fang. Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing. ECS Journal of Solid State Science and Technology 2020, 9, 073002 .

AMA Style

Professor Yi-Lung Cheng, Yu-Lu Lin, Professor Giin-Shan Chen, Professor Jau-Shiung Fang. Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing. ECS Journal of Solid State Science and Technology. 2020; 9 (7):073002.

Chicago/Turabian Style

Professor Yi-Lung Cheng; Yu-Lu Lin; Professor Giin-Shan Chen; Professor Jau-Shiung Fang. 2020. "Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing." ECS Journal of Solid State Science and Technology 9, no. 7: 073002.

Book chapter
Published: 19 August 2020 in Nanofluid Flow in Porous Media
Reads 0
Downloads 0

To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter- and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.

ACS Style

Yi-Lung Cheng; Chih-Yen Lee. Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics. Nanofluid Flow in Porous Media 2020, 1 .

AMA Style

Yi-Lung Cheng, Chih-Yen Lee. Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics. Nanofluid Flow in Porous Media. 2020; ():1.

Chicago/Turabian Style

Yi-Lung Cheng; Chih-Yen Lee. 2020. "Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics." Nanofluid Flow in Porous Media , no. : 1.

Journal article
Published: 01 May 2020 in ECS Journal of Solid State Science and Technology
Reads 0
Downloads 0

Due to the continuous increase of multilevel Cu/low-k interconnects, the total thermal budget has been increasing. As a result, the effects of post-annealing on the time-dependent-dielectric-breakdown (TDDB) and electromigration (EM) reliability of Cu/low-k interconnects were investigated in this study. Dense and porous low-k SiCOH dielectric films without or with an SiCNH capping layer were used for comparison. Post-annealing reduced TDDB lifetimes for dense and porous SiCOH dielectric films without a capping layer. With an SiCNH capping layer, annealing at 400°C had no impact on TDDB lifetime due to the suppression of Cu migration induced breakdown. However, as the annealing temperature increased to 600°C, both dense and porous SiCOH dielectric films displayed a significant reduction in TDDB lifetimes. The SiCNH capping layer is crucial for EM lifetime improvement due to the reduction of Cu surface migration. With an SiCNH capping layer, the post-annealing influencing EM lifetimes depended on the flow direction of electron. In the case of electron up-flow, EM lifetimes remained unchanged for both dense and porous low-k dielectrics upon annealing at 400°C. While for electron down-flow case, annealing at 400°C degraded EM lifetime and the reduction was pronounced for porous dielectric films.

ACS Style

Yi-Lung Cheng; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang. Effect of Post-Annealing on Reliability of Cu/Low-k Interconnects. ECS Journal of Solid State Science and Technology 2020, 9, 054002 .

AMA Style

Yi-Lung Cheng, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang. Effect of Post-Annealing on Reliability of Cu/Low-k Interconnects. ECS Journal of Solid State Science and Technology. 2020; 9 (5):054002.

Chicago/Turabian Style

Yi-Lung Cheng; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang. 2020. "Effect of Post-Annealing on Reliability of Cu/Low-k Interconnects." ECS Journal of Solid State Science and Technology 9, no. 5: 054002.

Journal article
Published: 12 April 2020 in Thin Solid Films
Reads 0
Downloads 0

Continuous scaling in back-end-of-line interconnects brings about a significant increase in the line resistance for advanced integrated circuits. To alleviate this issue, cobalt (Co) is proposed to replace copper (Cu) as an interconnect conductor. Effects of different metals (Cu and Co) on the electrical characteristics and reliability of the porous carbon-doping low-dielectric-constant (low-k) films were evaluated in this study. Compared with Cu/porous low-k integration, Co/porous low-k integration exhibited less degradation in the electrical characteristics and reliability under thermal or electrical stress. This study suggests that Co interconnects can provide barrier-free or barrier-less processing, which is a promising strategy for advanced semiconductor technology nodes.

ACS Style

Yi-Lung Cheng; Hong-Chang Huang; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang. Comparison of Cu and Co Integration with Porous Low-k SiOCH Dielectrics. Thin Solid Films 2020, 704, 138010 .

AMA Style

Yi-Lung Cheng, Hong-Chang Huang, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang. Comparison of Cu and Co Integration with Porous Low-k SiOCH Dielectrics. Thin Solid Films. 2020; 704 ():138010.

Chicago/Turabian Style

Yi-Lung Cheng; Hong-Chang Huang; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang. 2020. "Comparison of Cu and Co Integration with Porous Low-k SiOCH Dielectrics." Thin Solid Films 704, no. : 138010.

Journal article
Published: 04 April 2020 in Thin Solid Films
Reads 0
Downloads 0

In this study, two types of silicon carbonitride (SiCxNy) layers using different deposition precursors (single-source and multi-source precursors) were capped onto the porous low-dielectric-constant (low-k) SiOCH films. The electrical characteristics and reliability of the fabricated SiCxNy/SiOCH dielectric stacks were compared. Less plasma damage on the low-k SiOCH film was made for capping SiCxNy layer using single-source precursor as compared to that using the conventional multi-source precursors, thereby achieving a lower capacitance. Additionally, time-dependence-dielectric-breakdown reliability of the SiCxNy/SiOCH dielectric stack was promoted by adopting SiCxNy layer deposited using single-source precursor. Moreover, its barrier against Cu penetration under an electrical stress or thermal stress kept comparable capacity without degradation. Therefore, the developed SiCxNy layer deposited using single-source precursor in this study provides a promising integrity with a porous low-k dielectric in advanced technological nodes for semiconductor industry.

ACS Style

Yi-Lung Cheng; Yu-Lu Lin. Comparison of SiCxNy barriers using different deposition precursors capped on porous low-dielectric-constant SiOCH dielectric film. Thin Solid Films 2020, 702, 137983 .

AMA Style

Yi-Lung Cheng, Yu-Lu Lin. Comparison of SiCxNy barriers using different deposition precursors capped on porous low-dielectric-constant SiOCH dielectric film. Thin Solid Films. 2020; 702 ():137983.

Chicago/Turabian Style

Yi-Lung Cheng; Yu-Lu Lin. 2020. "Comparison of SiCxNy barriers using different deposition precursors capped on porous low-dielectric-constant SiOCH dielectric film." Thin Solid Films 702, no. : 137983.

Journal article
Published: 11 February 2020 in Coatings
Reads 0
Downloads 0

A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

ACS Style

Jau-Shiung Fang; Yu-Fei Sie; Yi-Lung Cheng; Giin-Shan Chen. A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR. Coatings 2020, 10, 164 .

AMA Style

Jau-Shiung Fang, Yu-Fei Sie, Yi-Lung Cheng, Giin-Shan Chen. A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR. Coatings. 2020; 10 (2):164.

Chicago/Turabian Style

Jau-Shiung Fang; Yu-Fei Sie; Yi-Lung Cheng; Giin-Shan Chen. 2020. "A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR." Coatings 10, no. 2: 164.

Journal article
Published: 08 February 2020 in Coatings
Reads 0
Downloads 0

In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 °C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

ACS Style

Yi-Lung Cheng; Chih-Yen Lee; Wei-Fan Peng; Giin-Shan Chen; Jau-Shiung Fang. Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects. Coatings 2020, 10, 155 .

AMA Style

Yi-Lung Cheng, Chih-Yen Lee, Wei-Fan Peng, Giin-Shan Chen, Jau-Shiung Fang. Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects. Coatings. 2020; 10 (2):155.

Chicago/Turabian Style

Yi-Lung Cheng; Chih-Yen Lee; Wei-Fan Peng; Giin-Shan Chen; Jau-Shiung Fang. 2020. "Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects." Coatings 10, no. 2: 155.

Journal article
Published: 28 October 2019 in Molecules
Reads 0
Downloads 0

In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3-xN film, additional annealing at 450 °C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn2O3-xN/p-SiOCH(N)/Si structure were investigated. The proposed Cu/Mn2O3-xN/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricated stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other metal-insulator-silicon (MIS) capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequence, the proposed Cu/Mn2O3-xN/p-SiCOH(N) scheme is promising integrity for back-end-of-line interconnects.

ACS Style

Yi-Lung Cheng; Yu-Lu Lin; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang; Lin; Lee; Chen; Fang. Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3-xN/Cu Integration. Molecules 2019, 24, 3882 .

AMA Style

Yi-Lung Cheng, Yu-Lu Lin, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang, Lin, Lee, Chen, Fang. Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3-xN/Cu Integration. Molecules. 2019; 24 (21):3882.

Chicago/Turabian Style

Yi-Lung Cheng; Yu-Lu Lin; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang; Lin; Lee; Chen; Fang. 2019. "Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3-xN/Cu Integration." Molecules 24, no. 21: 3882.

Journal article
Published: 11 April 2019 in Coatings
Reads 0
Downloads 0

Highly porous low-dielectric-constant (low-k) dielectric materials with a dielectric constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-k dielectric film with a k value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-k dielectric films were characterized. As SAMs were formed onto the highly porous low-k dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-k dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-k dielectric films to ensure better integrity.

ACS Style

Yi-Lung Cheng; Chiao-Wei Haung; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang; Lee; Chen; Fang. Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment. Coatings 2019, 9, 246 .

AMA Style

Yi-Lung Cheng, Chiao-Wei Haung, Chih-Yen Lee, Giin-Shan Chen, Jau-Shiung Fang, Lee, Chen, Fang. Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment. Coatings. 2019; 9 (4):246.

Chicago/Turabian Style

Yi-Lung Cheng; Chiao-Wei Haung; Chih-Yen Lee; Giin-Shan Chen; Jau-Shiung Fang; Lee; Chen; Fang. 2019. "Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment." Coatings 9, no. 4: 246.

Journal article
Published: 01 April 2019 in Thin Solid Films
Reads 0
Downloads 0

A dielectric barrier is required for a porous low-dielectric-constant (low-k) film used in Cu interconnects, however, resulting in an increased effective dielectric constant. In this study, a barrier-free fluorinated silicon glass (FSG) dielectric process is proposed and evaluated. Experimental results indicated that FSG films, although had a higher capacitance than p-SiCOH/SiCN stacked films, provide a higher hardness, better O2 plasma resistance, supper Cu barrier, and enhanced dielectric breakdown strength. Therefore, a barrier-free FSG dielectric process is feasible and promising strategy for back-end-of-line interconnects integrity. Moreover, the issue of Cu/FSG peeling under a thermal stress can be solved by providing a post-annealing after FSG deposition or using an in-situ two-step FSG deposition process. The mechanism is also proposed in this study.

ACS Style

Yi-Lung Cheng; Chih-Yen Lee; Wei-Jie Hung; Giin-Shan Chen; Jau-Shiung Fang; Jan-Shiung Fang. Barrier-free process for fluorinated silicon glass film in Cu interconnects. Thin Solid Films 2019, 678, 1 -7.

AMA Style

Yi-Lung Cheng, Chih-Yen Lee, Wei-Jie Hung, Giin-Shan Chen, Jau-Shiung Fang, Jan-Shiung Fang. Barrier-free process for fluorinated silicon glass film in Cu interconnects. Thin Solid Films. 2019; 678 ():1-7.

Chicago/Turabian Style

Yi-Lung Cheng; Chih-Yen Lee; Wei-Jie Hung; Giin-Shan Chen; Jau-Shiung Fang; Jan-Shiung Fang. 2019. "Barrier-free process for fluorinated silicon glass film in Cu interconnects." Thin Solid Films 678, no. : 1-7.

Book chapter
Published: 27 February 2019 in Plasma Science and Technology - Basic Fundamentals and Modern Applications
Reads 0
Downloads 0

Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for low-k dielectric materials. This is called “plasma damage” on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

ACS Style

Yi-Lung Cheng; Chih-Yen Lee; Chiao-Wei Haung. Plasma Damage on Low-k Dielectric Materials. Plasma Science and Technology - Basic Fundamentals and Modern Applications 2019, 1 .

AMA Style

Yi-Lung Cheng, Chih-Yen Lee, Chiao-Wei Haung. Plasma Damage on Low-k Dielectric Materials. Plasma Science and Technology - Basic Fundamentals and Modern Applications. 2019; ():1.

Chicago/Turabian Style

Yi-Lung Cheng; Chih-Yen Lee; Chiao-Wei Haung. 2019. "Plasma Damage on Low-k Dielectric Materials." Plasma Science and Technology - Basic Fundamentals and Modern Applications , no. : 1.

Journal article
Published: 09 November 2018 in ECS Journal of Solid State Science and Technology
Reads 0
Downloads 0

An ultrathin (e.g., ≤ 2 nm) barrier is needed for fabricating Cu interconnects associated with porous low-k (p-SiOCH) dielectrics with a high aspect ratio trenches/vias in the ultra large scale integrated circuits. To implement successfully the ultrathin Mn oxide barrier on the p-SiOCH dielectric for Cu interconnection, understanding is needed of how the Mn oxide is formed. This study investigated a 2-nm-thick Mn oxide film, deposited by sputtering with a biased-filter intermediating, as the barrier layer to prevent Cu from diffusion. Phase formation of the as-deposited Mn oxide was examined by X-ray photoelectron spectroscopy and X-ray absorption near edge spectroscopy to confirm the formation of Mn2O3. The experimental results indicated that the formation of Mn2O3 barrier is highly effective in preventing the Cu film from diffusion and agglomeration. Thermal stability of the Cu film increased up to 550°C, 250°C greater than the p-SiOCH dielectric without the Mn2O3 film, when combining the nitrogen-stuffed treatment on the p-SiOCH dielectric and annealed the Mn2O3 before the Cu deposition. The structures of Mn2O3 barrier and p-SiOCH dielectric after nitrogen-stuffing treatments were analyzed to evaluate their applicability in Cu interconnects.

ACS Style

Jau-Shiung Fang; Kuang-Yu Yu; Yi-Sheng Wang; Giin-Shan Chen; Yi-Lung Cheng. A 2-nm-Thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films. ECS Journal of Solid State Science and Technology 2018, 7, N137 -N142.

AMA Style

Jau-Shiung Fang, Kuang-Yu Yu, Yi-Sheng Wang, Giin-Shan Chen, Yi-Lung Cheng. A 2-nm-Thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films. ECS Journal of Solid State Science and Technology. 2018; 7 (11):N137-N142.

Chicago/Turabian Style

Jau-Shiung Fang; Kuang-Yu Yu; Yi-Sheng Wang; Giin-Shan Chen; Yi-Lung Cheng. 2018. "A 2-nm-Thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films." ECS Journal of Solid State Science and Technology 7, no. 11: N137-N142.

Journal article
Published: 01 September 2018 in Surface and Coatings Technology
Reads 0
Downloads 0

This work investigates the electrical characteristics and reliability of a dielectric stack with a low-dielectric-constant (low-k) SiOCH film and a capping SiCNH film. Two kinds of low-k SiOCH films were used: a dense low-k film without porosity and a porous low-k film with a porosity of 15.0. The deposition of the capping SiCNH layer on both dense and porous low-k SiOCH films increased the overall dielectric constant. The porous low-k SiOCH film exhibited a greater increase in the dielectric constant. Capping a SiCNH layer on a low-k SiOCH film can retard damage by O2 plasma and diffusion of Cu ions diffusion. Lager improvements in time-dependent-dielectric-breakdown and electromigration lifetimes were detected for the porous low-k SiOCH film.

ACS Style

Yi-Lung Cheng; Chih-Yen Lee; Wei-Jie Hung; Giin-Shan Chen; Jan-Shiung Fang. Electrical and reliability characteristics of dielectric stack with low dielectric constant SiCOH and capping SiCNH films. Surface and Coatings Technology 2018, 350, 57 -63.

AMA Style

Yi-Lung Cheng, Chih-Yen Lee, Wei-Jie Hung, Giin-Shan Chen, Jan-Shiung Fang. Electrical and reliability characteristics of dielectric stack with low dielectric constant SiCOH and capping SiCNH films. Surface and Coatings Technology. 2018; 350 ():57-63.

Chicago/Turabian Style

Yi-Lung Cheng; Chih-Yen Lee; Wei-Jie Hung; Giin-Shan Chen; Jan-Shiung Fang. 2018. "Electrical and reliability characteristics of dielectric stack with low dielectric constant SiCOH and capping SiCNH films." Surface and Coatings Technology 350, no. : 57-63.