Bruce Gnade

Dr. Bruce Gnade


Research Focus & Metrics

Academic Career Length

23Years (2004-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 September 2014 in Advanced Materials
Verified
Journal Article
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QWQi Wang
Qi Wang
IOIain W. H. Oswald
Iain W. H. Oswald
XYXiaolong Yang
Xiaolong Yang
GZGuijiang Zhou
Guijiang Zhou
HJHuiping Jia
Huiping Jia
BGBruce Gnade
Bruce Gnade

24 May 2013 in Advanced Functional Materials
Verified
Journal Article
Closed access
PDF file
QWQi Wang
Qi Wang
IOIain W. H. Oswald
Iain W. H. Oswald
MPMichael R. Perez
Michael R. Perez
HJHuiping Jia
Huiping Jia
BGBruce Gnade
Bruce Gnade
MOMohammad Omary
Mohammad Omary

16 April 2014 in Advanced Functional Materials
Verified
Journal Article
Closed access
PDF file
QWQi Wang
Qi Wang
IOIain W. H. Oswald
Iain W. H. Oswald
MPMichael R. Perez
Michael R. Perez
HJHuiping Jia
Huiping Jia
ASAhmed A. Shahub
Ahmed A. Shahub
MOMohammad Omary
Mohammad Omary

1 January 2010 in Journal of the Electrochemical Society
Verified
Journal Article
Closed access
PDF file
RGRahul P. Gupta
Rahul P. Gupta
KXK. Xiong
K. Xiong
JWJ. B. White
J. B. White
KCKyeongjae Cho
Kyeongjae Cho
HAH. N. Alshareef
H. N. Alshareef
BGBruce Gnade
Bruce Gnade
A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Bi</mml:mtext></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Te</mml:mtext></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Bi2Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at <mml:math display="inline"><mml:mrow><mml:mn>100</mml:mn><mml:mo>°</mml:mo><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math>100°C on samples that were sputter-cleaned further reduces the contact resistivity to <mml:math display="inline"><mml:mrow><mml:mo><</mml:mo><mml:msup><mml:mrow><mml:mn>10</mml:mn></mml:mrow><mml:mrow><mml:mo>−</mml:mo><mml:mn>7</mml:mn></mml:mrow></mml:msup><mml:mspace width="0.5em"></mml:mspace><mml:mi>Ω</mml:mi><mml:mspace width="0.5em"></mml:mspace><mml:msup><mml:mrow><mml:mtext>cm</mml:mtext></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math><10−7Ωcm2 for both Ni and Co contacts to <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Bi</mml:mtext></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Te</mml:mtext></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Bi2Te3 . Co as a suitable contact metal to <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Bi</mml:mtext></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Te</mml:mtext></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Bi2Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Bi</mml:mtext></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Te</mml:mtext></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Bi2Te3 based devices.

28 February 2006 in Organic Electronics
Verified
Journal Article
Closed access
HJHuiping Jia
Huiping Jia
GPGaurang K. Pant
Gaurang K. Pant
EGErich K. Gross
Erich K. Gross
RWRobert M. Wallace
Robert M. Wallace
BGBruce Gnade
Bruce Gnade

25 June 2014 in Inorganic Chemistry
Verified
Journal Article
Closed access
RMRoy N. McDougald
Roy N. McDougald
BCBhaskar Chilukuri
Bhaskar Chilukuri
HJHuiping Jia
Huiping Jia
MPMichael R. Perez
Michael R. Perez
HRHassan Rabaâ
Hassan Rabaâ
MOMohammad Omary
Mohammad Omary