A film bulk acoustic wave resonator (FBAR) is a type of resonator with high frequency and small dimensions, particularly suitable for use as a sensor for physical and biochemical sensing with high sensitivity. FBAR-based sensors have been extensively studied, however they commonly use discrete devices and network analyzers for evaluation, and therefore are far from being able to be used in practical applications. This paper reports the design and analysis of an FBAR-based Pierce oscillator and a field-programmable gate array (FPGA)-based frequency counter, and the use of the oscillator as a humidity sensor with the frequency counter as the measuring circuit. Graphene oxide (GO) is used as the sensitive film to improve the sensitivity. The resonant frequency of the oscillator with a GO film shows a linear decrease with an increase in relative humidity, with a sensitivity of ca . 5 kHz per %RH (relative humidity) in the range of 3%RH to 70%RH, and a higher frequency shift is induced above 70%RH. The FBAR oscillator sensor shows excellent stability and repeatability, demonstrating the feasibility and potential sensing application using the integrated FBAR chip and simple frequency counter, particularly suitable for portable electronics.

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 10¹⁷ cm⁻³. A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm², the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

This paper reports on a surface acoustic wave (SAW) based cell lysis device on a LiNbO₃ substrate by utilizing high speed collision of cells, which are accelerated by acoustic streaming. With varying working powers, cell lysis was achieved within 20 s and more than 95% lysis efficiency. The cell solution volume effect on SAW based lysis was also investigated and proved that it is not the main issue. With the CCK8 based viability test and verification of cell contents by electrophoresis, the efficient lysis results of our devices have been verified.