Combining electron‐ and hole‐selective materials in one crystalline silicon (Si) solar cell, thereby avoiding any dopants, is not considered for application to photovoltaic industry until only comparable efficiency and stable performance are achievable. Here, it is demonstrated how a conventionally unstable electron‐selective contact (ESC) is optimized with huge boost in stability as well as improved electron transport. With the introduction of a Ti thin film between a‐Si:H(i)/LiF and Al electrode, high‐level passivation (S_eff = 4.6 cm s^–1) from a‐Si:H(i) and preferential band alignment (ρ_C = 7.9 mΩ cm²) from low work function stack of LiF/Ti/Al are both stably retained in the newly constructed n‐Si/a‐Si:H(i)/LiF/Ti/Al ESC. A detailed interfacial elements analysis reveals that the efficiently blocked inward diffusion of Al from electrode by the Ti protecting layer balances transport and recombination losses in general. This excellent electron‐selective properties in combination with large process tolerance that enable remarkable device performance, particularly high efficiencies of 22.12% and 23.61%, respectively, are successfully approached by heterojunction solar cells with dopant‐free ESC and dopant‐free contacts for both polarities.

Although the effect of high temperature on the performance of organic solar cells has been widely investigated, it is inevitably influenced by the associated annealing effect (which usually leads to film morphology change and variation in electrical properties), which makes the discussion more sophisticated. In this study, we simplified the issue and investigated the influence of low temperatures (from room temperature to 77 K) on the photocurrent and internal/external quantum efficiency of a CuPc/C60 based solar cell. We found that besides the charge dynamic process (charge transport), one or more of the exciton dynamic processes, such as exciton diffusion and exciton dissociation, also play a significant role in affecting the photocurrent of organic solar cells at different temperatures. Additionally, the results showed that the temperature had negligible influence on the absorption of the CuPc film as well as the exciton generation process, but obviously influenced the other two exciton dynamic processes (exciton diffusion and exciton dissociation).

Crystalline silicon solar cells produced by doping processes have intrinsic shortages of high Auger recombination and/or severe parasitic optical absorption. Dopant-free carrier-selective contacts (DF-CSCs) are alternative routines for the next generation of highly efficient solar cells. However, it is difficult to achieve both good passivating and low contact resistivity for most DF-CSCs. In this paper, a high-quality dopant-free electron-selective passivating contact made from ultra-low concentration water solution is reported. Both low recombination current (J₀) ~10 fA/cm² and low contact resistivity (ρ_c) ~31 mΩ·cm² are demonstrated with this novel contact on intrinsic amorphous silicon thin film passivated n-Si. The electron selectivity is attributed to relieving of the interfacial Fermi level pinning because of dielectric properties (decaying of the metal-induced gap states (MIGS)). The full-area implementation of the novel passivating contact shows 20.4% efficiency on a prototype solar cell without an advanced lithography process. Our findings offer a very simple, cost-effective, and efficient solution for future semiconductor devices, including photovoltaics and thin-film transistors.