To improve the low responsivity of the silicon avalanche photodiode in the near-ultraviolet wavelength range, we designed a near-ultraviolet highly responsive Si-APD basic structure with a multiplication layer neighboring the photosensitive surface through the analysis of the optical absorption characteristics, junction breakdown characteristics, and avalanche multiplication characteristics. The dark current and electric field distribution of the device were investigated. Meanwhile, the structural parameters of the surface non-depleted layer, multiplication layer, and absorption layer were optimized. It was found that the breakdown voltage of the device is 21.07 V. At an applied bias voltage of 20.02 V, the device exhibits a responsivity of 6.79–14.51 A/W in the wavelength range of 300–400 nm. These results provide valuable insights for the design of silicon avalanche photodiode with high responsivity in the near-ultraviolet range.

The stepped micro-mirror imaging Fourier transform spectrometer (SIFTS) has the advantages of high throughput, compactness, and stability. However, the systematic errors in the interference core of the SIFTS have a significant impact on the interferogram and the reconstructed spectrum. In order to reduce the influence of systematic errors, a transfer error model of the systematic errors in the interference core of the SIFTS is established, and an interferogram and spectrum calibration method is presented, which combines the least squares fitting calibration and the row-by-row fast Fourier transform-inverse fast Fourier transform (FFT-IFFT) flat-field calibration. The experimental results show that the methods can sufficiently reduce the influence of systematic errors in the interference core of the SIFTS, such as the interferogram fringe tilt, the peak position shift of the reconstructed spectrum, and the error of spectral response.

Infrared imaging spectrometers detect and identify targets by collecting spectral and image information. However, when detecting small temperature differences and dynamic targets, the accuracy of infrared detection is reduced, the traditional scanning structure detection time is longer, the real-time performance is poor and it is easy to introduce motion artifacts. This paper proposes an infrared polarization snapshot spectral imaging system (PSIFTIS) based on a polarizer array, a lens array and a roof-shaped stepped micromirror. Polarized light can solve the problem of small-temperature-difference target recognition by characterizing the surface properties of materials. Lens arrays utilize multi-aperture imaging to achieve snapshot detection of targets. The system can obtain 4D data information, including polarization, in a single measurement cycle. This study completed the overall optical design of a PSIFTIS and an optical simulation experiment using it. Finally, a system prototype was built in the laboratory and a polarization spectrum detection experiment was carried out. The experimental results show that the PSIFTIS could accurately obtain the polarization spectrum information for the target, the spectral resolution reached 7.8 cm⁻¹ and the Stokes measurement error was less than 5%.

The use of a dual-interference channels static Fourier transform imaging spectrometer based on stepped micro-mirror (D-SIFTS) for environmental gas monitoring has the advantages of high throughput, a compact structure, and a stable performance. It also has the characteristics of both a broad spectral range and high spectral resolution. However, its unique structural features also bring many problems for subsequent data processing, mainly including the complex distribution of the interference data, the low signal-to-noise ratio (SNR) of infrared scene images, and a unique inversion process of material information. To this end, this paper proposes a method of image and spectra information processing and gas concentration inversion. A multiscale enhancement algorithm for infrared images incorporating wavelet denoising is used to obtain high-quality remote sensing scene images, and spectral reconstruction optimization algorithms, such as interference intensity sequence resampling, are used to obtain accurate spectral information; the quantitative calibration model of the detected gas concentration is established to achieve high-precision inversion of gas concentration, and its distribution is visualized in combination with the scene image. Finally, the effectiveness and accuracy of the data processing algorithm are verified through the use of several experiments, which provide essential theoretical guidance and technical support for the practical applications of D-SIFTS.

Infrared multispectral imaging technology can achieve the long-distance, wide-ranging and fast detection of target gas, and has been widely used in the fields of dangerous-gas detection and environmental monitoring. However, due to the difficulty in acquiring background radiation as well as atmospheric disturbance and noise interference in the detection process, the quantitative detection of gas concentration has become a difficult problem to solve. Therefore, this paper proposes an inversion method for gas column concentration based on infrared multispectral imaging technology. Firstly, infrared background radiation images of the non-target gas absorption spectrum band were collected and converted into background radiation images of the target gas absorption spectrum band according to the dual-channel mapping relationship. Then, combined with the gas radiation images of the target gas absorption spectrum band, the column concentration distribution of the gas was obtained by using the measured calibration relationship between absorbance and column concentration. Experiments of gas detection in different environments were carried out, and the column concentration distribution of the target gas was inverted using this method; the results showed that the average relative error of the inversion of the gas column concentration was 4.84%, which enables the quantitative detection of gas column concentration in a complex environment.

Photodetectors with broad spectral response and high responsivity demonstrate significant potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode featuring nanostructures that enhance light absorption. By optimizing the device epitaxial structure and these nanostructures, a wide spectral responsivity from 0.4 to 1.6 μm is achieved. The results demonstrate that introducing surface photon-trapping nanoholes and SiO₂ reflective grating nanostructures increases the average light absorptivity from 0.64 to 0.84 in the 0.4–1.1 μm range and from 0.31 to 0.56 in the 1.1–1.6 μm range. At an applied bias of 0.95 V_br-apd, the responsivity reaches 17.24 A/W at 1.31 μm and 17.6 A/W at 1.55 μm. This research provides theoretical insights for designing high-responsivity photodetectors in the visible–near-infrared broadband spectrum.