The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.

Over the years, free-space optical (FSO) communication has attracted considerable research interest owing to its high transmission rates via the unbounded and unlicensed bandwidths. Nevertheless, various weather conditions lead to significant deterioration of the FSO link capabilities. In this context, we report on the modelling of the channel attenuation coefficient (β) for a coastal environment and related ambient, considering the effect of coastal air temperature (T), relative humidity (R_H) and dew point (T_D) by employing a mobile FSO communication system capable of achieving a transmission rate of 1 Gbps at an outdoor distance of 70 m for optical beam wavelengths of 1310 nm and 1550 nm. For further validation of the proposed models, an indoor measurement over a 1.5 m distance utilizing 1310 nm, 1550 nm, and 1064 nm lasers was also performed. The first model provides a general link between T and β, while the second model provides a relation between β, R_H as well as T_D. By validating our attenuation coefficient model with actual outdoor and indoor experiments, we obtained a scaling parameter x and decaying parameter c values of 19.94, 40.02, 45.82 and 0.03015, 0.04096, 0.0428 for wavelengths of 1550, 1310, 1064 nm, respectively. The proposed models are well validated over the large variation of temperature and humidity over the FSO link in a coastal region and emulated indoor environment.

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride optoelectronic devices, based on aluminum gallium nitride and boron nitride and their alloys, and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed. We emphasize wide-bandgap nitride compound semiconductors (i.e., (B, Al, Ga)N) as the deep-ultraviolet materials of interest, and two-dimensional materials, namely graphene, two-dimensional boron nitride, and two-dimensional transition metal dichalcogenides, along with gallium oxide, as the hybrid integrated materials. We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices. In this article we provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates. A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.

The CLP Publishing collects CLP journals and partnered optics and photonics journals, and provides readers an optical publishing platform with global influence. SPIE, OSA, CUP. Chinese Laser Press (CLP), established by Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS) and Chinese Optical Society (COS) in 2009, nowadays publishes eight journals and manages three online platforms.