Dmitri B. Migas

Dr. Dmitri B. Migas


Research Focus & Metrics

Academic Career Length

25Years (2002-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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22 August 2023 in Journal of Materials Chemistry C
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Journal Article
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DMDmitri B. Migas
Dmitri B. Migas
VTVitaliy A. Turchenko
Vitaliy A. Turchenko
ARA. V. Rutkauskas
A. V. Rutkauskas
STSergey V. Trukhanov
Sergey V. Trukhanov
Tatsiana ZubarTatsiana Zubar
Tatsiana Zubar
NSNatalia V. Skorodumova
Natalia V. Skorodumova
We report the observation of a peculiar polarization behavior of BaFe12O19 in electric field where the linear polarization is detected at temperatures below 150 K whereas at higher temperatures a hysteresis-like polarization response is observed.


27 May 2003 in Physical Review Letters
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Journal Article
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ARA. Rastelli
A. Rastelli
HKH. von Känel
H. von Känel
GAG. Albini
G. Albini
PRPaolo Raiteri
Paolo Raiteri
DMDmitri B. Migas
Dmitri B. Migas
LMLeo Miglio
Leo Miglio
By using scanning tunneling microscopy we found that the surface reconstruction of Ge/Si(001) epilayers evolves from (M×N) to (2×N), and eventually to (2×1), during exposure to a Si flux. This sequence appears to be just the inverse of that observed during the growth of Ge or SiGe alloys on Si(001). However, molecular dynamics simulations supported by ab initio calculations allow us to interpret this morphological evolution in terms of Si migration through the epilayer and complex Si-Ge intermixing below the top Ge layer.

1 October 2002 in Microelectronic Engineering
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Journal Article
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LIL. Ivanenko
L. Ivanenko
VSV.L. Shaposhnikov
V.L. Shaposhnikov
AFA.B. Filonov
A.B. Filonov
DMDmitri B. Migas
Dmitri B. Migas
GBG. Behr
G. Behr
VBV.E. Borisenko
V.E. Borisenko

6 September 2023 in Ceramics International
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Journal Article
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YYYuan Yao
Yuan Yao
IHI.A. Hrekau
I.A. Hrekau
Daria TishkevichDaria Tishkevich
Daria Tishkevich
TZT.I. Zubar
T.I. Zubar
VTV.A. Turchenko
V.A. Turchenko
Alex V. TrukhanovAlex V. Trukhanov
Alex V. Trukhanov

26 March 2014 in Physical Chemistry Chemical Physics
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Journal Article
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DMDmitri B. Migas
Dmitri B. Migas
AFAndrew B. Filonov
Andrew B. Filonov
VBVictor E. Borisenko
Victor E. Borisenko
NSNatalia V. Skorodumova
Natalia V. Skorodumova

By means of ab initio calculations we have revealed the existence of sizable anisotropy in electronic properties of anatase TiO2 nanowires with respect to orientation: nanowires with 〈001〉, 〈100〉 and 〈110〉 axes are found to be direct band-gap, indirect band-gap and degenerate semiconductor materials, respectively. The degenerate semiconducting properties of 〈110〉-oriented TiO2 nanowires are predicted to be the intrinsic features closely connected with stoichiometry. A band-gap variation with nanowire diameter is also shown to display rather complex behavior characterized by a competition between quantum confinement and surface state effects that is fully compatible with the available contradictory experimental data. Finally, we propose a model to explain the band-gap variation with size in TiO2 nanowires, nanocrystals and thin films.