Xiaojie Luo

Dr. Xiaojie Luo

Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
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Research Focus & Metrics

Academic Career Length

22Years (2005-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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5 February 2014 in Journal of the American Chemical Society
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Journal Article
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XWXiaopeng Wang
Xiaopeng Wang
Jiagang WuJiagang Wu
Jiagang Wu
DXDingquan Xiao
Dingquan Xiao
JZJianguo Zhu
Jianguo Zhu
XCXiaojing Cheng
Xiaojing Cheng
XWXiangjian Wang
Xiangjian Wang

29 November 2016 in Advanced Materials
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ZSZixiong Sun
Zixiong Sun
CMChunrui Ma
Chunrui Ma
Ming LiuMing Liu
Ming Liu
JCJin Cui
Jin Cui
LLLu Lu
Lu Lu
CJChun‐Lin Jia
Chun‐Lin Jia

9 September 2019 in Angewandte Chemie International Edition
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RSRan Su
Ran Su
HHH. Alex Hsain
H. Alex Hsain
MWMing Wu
Ming Wu
DZDawei Zhang
Dawei Zhang
XHXinghao Hu
Xinghao Hu
SPStephen J. Pennycook
Stephen J. Pennycook

1 April 2017 in Acta Materialia
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TLTangyuan Li
Tangyuan Li
Xiaojie LuoXiaojie Luo
Xiaojie Luo
XKXiaoqin Ke
Xiaoqin Ke
SCShaodong Cheng
Shaodong Cheng
SMShaobo Mi
Shaobo Mi
XTXiaoli Tan
Xiaoli Tan

13 July 2010 in Physical Review B
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QKQingqing Ke
Qingqing Ke
Xiaojie LuoXiaojie Luo
Xiaojie Luo
YWYang Wang
Yang Wang
John WangJohn Wang
John Wang
Oxygen-vacancies-related dielectric relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (BLFM) thin film have been investigated by temperature-dependent impedance spectroscopy from 40\,\ifmmode^\circ\else\textdegree\fi{}C up to 200\,\ifmmode^\circ\else\textdegree\fi{}C. We found that hopping electrons and single-charged oxygen vacancies (VO\ifmmode\bullet\else\textbullet\fi{}) coexist in the BLFM thin film and make contribution to dielectric response of grain and grain boundary, respectively. The activation energy for VO\ifmmode\bullet\else\textbullet\fi{} is shown to be 0.94 eV in the whole temperature range investigated whereas the distinct activation energies for electrons are 0.136 eV below 110\,\ifmmode^\circ\else\textdegree\fi{}C and 0.239 eV above 110\,\ifmmode^\circ\else\textdegree\fi{}C in association with hopping along the Fe2+-VO\ifmmode\bullet\else\textbullet\fi{}-Fe3+ chain and hopping between Fe2+-Fe3+, respectively, indicating different hopping processes for electrons. Moreover, it has been found that hopping electrons are in the form of long-range movement while localized and long-range movement of oxygen vacancies coexist in BLFM film. The Cole-Cole plots in modulus formalism show a polydispersive nature of relaxation for oxygen vacancies and a single relaxation time for hopping electrons. The scaling behavior of modulus spectra further suggests that the distribution of relaxation times for oxygen vacancies is temperature independent.

15 January 2009 in Journal of Applied Physics
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Xiaojie LuoXiaojie Luo
Xiaojie Luo
The experimental characteristics of polarization fatigue in thin-film, bulk ceramic, and single-crystalline ferroelectrics have been reviewed in detail. Various scenarios and models proposed for fatigue in ferroelectric materials during the past few decades have been discussed, together with our own model developed very recently [Phys. Rev. Lett. 97, 177601 (2006); Phys. Rev. B 75, 244104 (2007)]. Interpretations for the experimental data reviewed in this paper but untreated in our previous work [Phys. Rev. B 75, 244104 (2007)] as well as the methods of improving the fatigue endurance in ferroelectrics are given based on this model. Finally, the results on polarization fatigue in some special classes of ferroelectrics such as multiferroics (e.g., BiFeO3 -based materials), ferroelectric polymers, and antiferroelectric thin films and ceramics are discussed and accounted for in light of our model.