The dielectric properties of Al _x Nb _0.03 Ti _0.97−x O ₂ ( x = 0, 0.01, 0.03 and 0.05) ceramics are investigated and a CP with low dielectric loss was found in samples with x ≤ 0.03.

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO₂ single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10⁴, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO₂ polycrystalline ceramic had semiconductor grains and insulating grain boundaries and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

In this paper, we demonstrate the enhanced photodegradation of rhodamine B on polarized ferroelectric KNbO₃ (KNO) particles.

The phase-junction engineering of CoSe ₂ on SiC NWs boosts its performance for efficient sodium/potassium storage.