A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible–extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10–20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500–1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality.

Shortwave infrared polarization imaging can increase the contrast of the target to the background to improve the detection system’s recognition ability. The division of focal plane polarization indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice due to the advantages of compact structure, real-time imaging, and high stability. However, because of the mismatch between nanostructures and photosensitive pixels as well as the crosstalk among the different polarization directions, the currently reported extinction ratio (ER) of superpixel-polarization-integrated detectors cannot meet the needs of high-quality imaging. In this paper, a 1024 × 4 InGaAs FPA detector on-chip integrated with a linear polarization grating (LPG) was realized and tested. The detector displayed good performance throughout the 0.9–1.7 um band, and the ERs at 1064 nm, 1310 nm and 1550 nm reached up to 22:1, 29:1 and 46:1, respectively. For the crosstalk investigation, the optical simulation of the grating-integrated InGaAs pixel was carried out, and the limitation of the ER was calculated. The result showed that the scattering of incident light in the InP substrate led to the crosstalk. Moreover, the deviation of the actual grating morphology from the designed structure caused a further reduction in the ER.

研究了沉积在液体基底（硅油）表面金薄膜中的带状有序结构和自组装现象.实验结果表明：在一定条件下，生长在硅油表面的金薄膜中可形成一种特征的有序结构，它是由近似矩形状的畴块拼接而成的；相邻畴块的长度近似相等，但宽度一般不同，因而具有特征长度为101—102μm数量级的准周期结构.进一步的实验发现：此类带状有序结构是由薄膜中特征内应力所引起的物质相互挤压而形成的.另外，对此类具有近似自由支撑边界条件的薄膜中的内应力形成机理进行了研究.

Zinc diffusion behaviors in n type In0.83Ga0.17As epitaxial layers doped to 3.5 × 1015 cm−3 are investigated for the planar type extended wavelength In0.83Al0.17As/In0.83Ga0.17As focal plane arrays by incorporating the vacancy-related complex defect (VCD) model. The diffusion coefficients extracted from the measured zinc concentration profiles at 480 °C are determined to be 3.1 × 10−12 and 4.3 × 10−11 cm2/s for the kick-out and the VCD models, respectively. Both mechanisms compete with each other during the dynamic zinc atom drive-in process. The diffusion activation energies for two mechanisms are 0.56 and 0.06 eV, indicating that the VCD model is not quite sensitive to the temperature compared with the kick-out model. The higher diffusion coefficient of the VCD model renders the occurrence of an anomalous rapid drive-in process with a lower concentration in the lightly doped epitaxial layer, leading to the increased dark current densities of 0.052 A/cm2 at 300 K and 8.85 × 10−7 A/cm2 at 140 K with −10 mV bias. By precise control of the diffusion depth, low dark current densities at −10 mV were obtained with 1.84 × 10−3 A/cm2 at 300 K and 4.5 × 10−9 A/cm2 at 140 K. The high peak specific detectivity (D*) up to 1.89 × 1013 cm Hz1/2 W−1 is achieved under a long integration time of 400 ms with the pixel operability of 99.4%.