Sergey Meshkov

Sergey Meshkov

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Sergey Meshkov


Research Focus & Metrics

Academic Career Length

9Years (2018-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 January 2018 in Radioelectronics. Nanosystems. Information Technologies
Verified
Journal Article
Closed access
BUBauman Moscow State Technical University
Bauman Moscow State Technical University
NVNatalia Vetrova
Natalia Vetrova
YIYuri A. Ivanov
Yuri A. Ivanov
EKEvgeny V. Kuimov
Evgeny V. Kuimov
MMMstislav Makeev
Mstislav Makeev
VSVasily D. Shashurin
Vasily D. Shashurin

29 December 2019 in Radioelectronics. Nanosystems. Information Technologies
Verified
Journal Article
Closed access
BUBauman Moscow State Technical University
Bauman Moscow State Technical University
NVNatalia Vetrova
Natalia Vetrova
EKEvgeny V. Kuimov
Evgeny V. Kuimov
SMSergey A. Meshkov
Sergey A. Meshkov
VSVasily D. Shashurin
Vasily D. Shashurin


19 May 2019
Verified
Book Chapter
Closed access
PDF file
KCKirill Cherkasov
Kirill Cherkasov
SMSergey Meshkov
Sergey Meshkov
MMMstislav Makeev
Mstislav Makeev
YIYury Ivanov
Yury Ivanov
VSVasily Shashurin
Vasily Shashurin
BKBoris Khlopov
Boris Khlopov

10 February 2024
Verified
Book Chapter
Closed access
PDF file
NVNatalia Vetrova
Natalia Vetrova
EKEvgeny V. Kuimov
Evgeny V. Kuimov
SMSergey Meshkov
Sergey Meshkov
MMMstislav Makeev
Mstislav Makeev
VSVladimir Sinyakin
Vladimir Sinyakin
VSVasiliy Shasurin
Vasiliy Shasurin

10 September 2023
Verified
Conference Paper
Closed access
KCKirill V. Cherkasov
Kirill V. Cherkasov
SMSergey A. Meshkov
Sergey A. Meshkov
MMMstislav Makeev
Mstislav Makeev
Influence of technological errors of design parameters of a resonant-tunneling diode-based subharmonic radio frequency mixer of 10…11 GHz range operating on heterodyne’s second harmonic on its performance indices’ (intermediate frequency’s transmission losses, dynamic range’s top border by 1dB-compression, IP3 point’s position) distributions was studied. The following design parameters’ influence was researched: microstrip transmission lines’ linear dimensions, substrate’s thickness and relative permittivity, resonant-tunneling diode’s heterostructure layers’ thickness and chemical composition, mesa’s diameter and ohmic contacts’ resistivity. A mathematical model of resonant-tunneling diodes developed by authors was used to carry out the research, taking technological factors’ influence on the studied mixer’s performance indices into account. It is revealed that technological errors of a resonant-tunneling diode’s resonant-tunneling heterostructure’s layers’ thickness and chemical composition, combined with technological errors of spacer layers’ thickness, make dominant contribution in the technological variation of the studied mixer’s performance indices.