Proton beam (p-beam) writing is a new direct-writing process that uses a focused beam of MeV protons to pattern resist material at nanodimensions. The process, although similar in many ways to direct writing using electrons, nevertheless offers some interesting and unique advantages. Protons, being more massive, have deeper penetration in materials while maintaining a straight path, enabling p-beam writing to fabricate three-dimensional, high aspect ratio structures with vertical, smooth sidewalls and low line-edge roughness. Calculations have also indicated that p-beam writing exhibits minimal proximity effects, since the secondary electrons induced in proton/electron collisions have low energy. A further advantage stems from the ability of protons to displace atoms while traversing material, thereby increasing localized damage especially at the end of range. P-beam writing produces resistive patterns at depth in Si, allowing patterning of selective regions with different optical properties as well as the removal of undamaged regions via electrochemical etching.

We report the utilization of a focused mega-electron-volt (MeV) proton beam to write accurate high-aspect-ratio structures at sub-100 nm dimensions. Typically, a MeV proton beam is focused to a sub-100 nm spot size and scanned over a suitable resist material. When the proton beam interacts with matter it follows an almost straight path. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. These features enable smooth three-dimensional structures to be direct written into resist materials. Initial tests have shown this technique capable of writing high aspect ratio walls of 30 nm width with sub-3 nm edge smoothness.

The effect of dextran nanoparticles on the conformation and compaction of single DNA molecules confined in a nanochannel was investigated with fluorescence microscopy. It was observed that the DNA molecules elongate and eventually condense into a compact form with increasing volume fraction of the crowding agent. Under crowded conditions, the channel diameter is effectively reduced, which is interpreted in terms of depletion in DNA segment density in the interfacial region next to the channel wall. Confinement in a nanochannel also facilitates compaction with a neutral crowding agent at low ionic strength. The threshold volume fraction for condensation is proportional to the size of the nanoparticle, due to depletion induced attraction between DNA segments. We found that the effect of crowding is not only related to the colligative properties of the agent and that confinement is also important. It is the interplay between anisotropic confinement and osmotic pressure which gives the elongated conformation and the possibility for condensation at low ionic strength.