Xin Guo

Dr. Xin Guo

orcid

Research Focus & Metrics

Academic Career Length

11Years (2016-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 March 2018 in Journal of Power Sources
Verified
Journal Article
Closed access
TYTinghui Yao
Tinghui Yao
YLYali Li
Yali Li
DLDequan Liu
Dequan Liu
YGYipeng Gu
Yipeng Gu
SQShengchun Qin
Shengchun Qin
DHDeyan He
Deyan He

1 May 2018 in Applied Surface Science
Verified
Journal Article
Closed access
SQShengchun Qin
Shengchun Qin
TYTinghui Yao
Tinghui Yao
XGXin Guo
Xin Guo
QCQiang Chen
Qiang Chen
DLDequan Liu
Dequan Liu
DHDeyan He
Deyan He

15 April 2024 in Applied Physics Letters
Verified
Journal Article
Closed access
PDF file
YZYongpeng Zhao
Yongpeng Zhao
NWNan Wang
Nan Wang
HWHuaifeng Wang
Huaifeng Wang
SYShenglin Yuan
Shenglin Yuan
MLMengmeng Liu
Mengmeng Liu
LXLijia Xu
Lijia Xu
The spatial anisotropic arrangement of magnetic particles is expected to increase the magnetic resonance frequency of magnetic particles and optimize the magnetic loss. Herein, helical carbon nanocoils were used as a chiral template to induce the spatial spiral distribution of Fe3O4 particles. Meanwhile, a linear control group was constructed with carbon nanofibers as a template. The three-dimensional spiral structure promotes the confined growth and uniform distribution of Fe3O4 particles. Due to the enhanced magnetic property, chiral samples exhibited superior impedance matching compared to linear samples. Experimental tests and theoretical simulation confirm that the spatial anisotropic distribution helps to increase magnetic loss and optimize impedance matching. This work illustrates the important role of chiral structure in improving the magnetic anisotropy of magnetic nanoparticles and provides an effective strategy for optimizing electromagnetic wave dissipation.

1 November 2017 in Organic Electronics
Verified
Journal Article
Closed access
PSPengfei Shao
Pengfei Shao
XCXinyu Chen
Xinyu Chen
XGXin Guo
Xin Guo
WZWenjie Zhang
Wenjie Zhang
FCFangzhi Chang
Fangzhi Chang
DHDeyan He
Deyan He

1 March 2022 in Chinese Physics B
Verified
Journal Article
Closed access
PDF file
HYHaiting Yao
Haiting Yao
XGXin Guo
Xin Guo
ABAida Bao
Aida Bao
HMHaiyang Mao
Haiyang Mao
YMYouchun Ma
Youchun Ma
XLXuechao Li
Xuechao Li
Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on–off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.

13 May 2024 in Physical Chemistry Chemical Physics
Verified
Journal Article
Closed access
PDF file
YMYongqiang Ma
Yongqiang Ma
ABAida Bao
Aida Bao
XGXin Guo
Xin Guo
JWJie Wang
Jie Wang
In this paper, a new GaSe/ZnS van der Waals heterostructure (vdWH) was constructed and a systematic analysis of the electronic structure, interfacial properties, and transport and photocatalytic capacity of the GaSe/ZnS vdWH was performed by using first-principles calculations. It was found that the heterostructure exhibited excellent photocatalytic performance for water splitting. The direct band gap of the heterostructure calculated using the hybrid HSE06 functional was 2.19 eV, which had a good visible light absorption ability. The electronic structure of the type-II band arrangement effectively reduced the recombination of electron–hole pairs. The heterostructure also showed excellent transport ability, and the carrier mobility of electrons and holes along different directions was greatly improved. Additionally, as the electric field strength increased, the band gap width of the GaSe/ZnS vdWH narrowed and the heterostructure characteristics transitioned from semiconductor to metal properties, which were attributed to the appearance of near-free electronic (NFE) states induced by the strong electric field. Meanwhile, the optical absorption capacity of the heterostructure was greatly improved compared to the ZnS monolayer, reaching 1.44 × 105 cm−1 at an incident photon energy of 8.65 eV. Therefore, the GaSe/ZnS vdWH was proved to be an excellent photocatalytic material for water splitting in the present study.