Biosensors based on graphene field effect transistors (GFETs) have the potential to enable the development of point-of-care diagnostic tools for early stage disease detection. However, issues with reproducibility and manufacturing yields of graphene sensors, but also with Debye screening and unwanted detection of nonspecific species, have prevented the wider clinical use of graphene technology. Here, we demonstrate that our wafer-scalable GFETs array platform enables meaningful clinical results. As a case study of high clinical relevance, we demonstrate an accurate and robust portable GFET array biosensor platform for the detection of pancreatic ductal adenocarcinoma (PDAC) in patients' plasma through specific exosomes (GPC-1 expression) within 45 min. In order to facilitate reproducible detection in blood plasma, we optimized the analytical performance of GFET biosensors via the application of an internal control channel and the development of an optimized test protocol. Based on samples from 18 PDAC patients and 8 healthy controls, the GFET biosensor arrays could accurately discriminate between the two groups while being able to detect early cancer stages including stages 1 and 2. Furthermore, we confirmed the higher expression of GPC-1 and found that the concentration in PDAC plasma was on average more than 1 order of magnitude higher than in healthy samples. We found that these characteristics of GPC-1 cancerous exosomes are responsible for an increase in the number of target exosomes on the surface of graphene, leading to an improved signal response of the GFET biosensors. This GFET biosensor platform holds great promise for the development of an accurate tool for the rapid diagnosis of pancreatic cancer.

The conventional electron transport layer (ETL) TiO₂ has been widely used in perovskite solar cells (PSCs), which have produced exceptional power conversion efficiencies (PCE), allowing the technology to be highly regarded and propitious. Nevertheless, the recent high demand for energy harvesters in wearable electronics, aerospace, and building integration has led to the need for flexible solar cells. However, the conventional TiO₂ ETL layer is less preferred, where a crystallization process at a temperature as high as 450 °C is required, which degrades the plastic substrate. Zinc oxide nanorods (ZnO NRs) as a simple and low-cost fabrication material may fulfil the need as an ETL, but they still suffer from low PCE due to atomic defect vacancy. To delve into the issue, several dopants have been reviewed as an additive to passivate or substitute the Zn²⁺ vacancies, thus enhancing the charge transport mechanism. This work thereby unravels and provides a clear insight into dopant engineering in ZnO NRs ETL for PSC.

A nanogenerator (NG) is an energy harvester device that converts mechanical energy into electrical energy on a small scale by relying on physical changes. Piezoelectric semiconductor materials play a key role in producing high output power in piezoelectric nanogenerator. Low cost, reliability, deformation, and electrical and thermal properties are the main criteria for an excellent device. Typically, there are several main types of piezoelectric materials, zinc oxide (ZnO) nanorods, barium titanate (BaTiO₃) and lead zirconate titanate (PZT). Among those candidate, ZnO nanorods have shown high performance features due to their unique characteristics, such as having a wide-bandgap semiconductor energy of 3.3 eV and the ability to produce more ordered and uniform structures. In addition, ZnO nanorods have generated considerable output power, mainly due to their elastic nanostructure, mechanical stability and appropriate bandgap. Apart from that, doping the ZnO nanorods and adding doping impurities into the bulk ZnO nanorods are shown to have an influence on device performance. Based on findings, Ni-doped ZnO nanorods are found to have higher output power and surface area compared to other doped. This paper discusses several techniques for the synthesis growth of ZnO nanorods. Findings show that the hydrothermal method is the most commonly used technique due to its low cost and straightforward process. This paper reveals that the growth of ZnO nanorods using the hydrothermal method has achieved a high power density of 9 µWcm⁻².

The intriguing behavior of doped polyanilinine/graphene oxide (PANI/GO) offers a solution to the pivotal problem of device stability against moisture in perovskite solar cell (PSC). Tunable bandgap formation of doped PANI/GO with an absorber layer allows effective flexibility for charge carrier conduction and reduced series resistance further boosting the cell performance. Herein, the L₉ Orthogonal Array (OA) Taguchi-based grey relational analysis (GRA) optimization was introduced to intensify the key output responses. Furthermore, this work also delved into incorporating a Pb-free absorber perovskite layer, formamidinium tin triiodide (FASnI₃), and concomitantly eluding the environmentally hazardous substance. The numerical optimization supported by statistical analysis is based on experimental data to attain the utmost peak cell efficiency. Taguchi’s L₉ OA-based GRA predictive modeling recorded over one-fold enhancement over experimental results, reaching as high as 20.28% power conversion efficiency (PCE). Despite that, the PCE of the structures is severely affected by interface defects at the electron transport layer/absorber (ETL/Abs) vicinity, which is almost zero at merely 1 × 10¹⁴ cm⁻², manifesting that control measures need to be taken into account. This work deduces the feasibility of ETL/Abs stack structure in replacing the conventional Pb-based perovskite absorber layer, while maximizing the potential use of doped PANI/GO as a hole transport layer (HTL).