The integration of electronic functionalities into textiles for use as wearable sensors, energy harvesters, or coolers has become increasingly important in recent years. A special focus is on efficient thermoelectric materials. Copper iodide as a p-type thermoelectrically active, nontoxic material is attractive for energy harvesting and energy generation because of its transparency and possible high-power factor. The deposition of CuI on polyester spacer fabrics by wet chemical processes represents a great potential for use in textile industry for example as flexible thermoelectric energy generators in the leisure or industrial sector as well as in medical technologies. The deposited material on polyester yarn is investigated by electron microscopy, x-ray diffraction and by thermoelectric measurements. The Seebeck coefficient was observed between 112 and 153 µV/K in a temperature range between 30 °C and 90 °C. It is demonstrated that the maximum output power reached 99 nW at temperature difference of 65.5 K with respect to room temperature for a single textile element. However, several elements can be connected in series and the output power can be linear upscaled. Thus, CuI coated on 3D spacer fabrics can be attractive to fabricate thermoelectric devices especially in the lower temperature range for textile medical or leisure applications.

In order to facilitate the design freedom for the implementation of textile-integrated electronics, we seek flexible transparent conductive electrodes (TCEs) that can withstand not only the mechanical stresses encountered during use but also the thermal stresses of post-treatment. The transparent conductive oxides (TCO) typically used for this purpose are rigid in comparison to the fibers or textiles they are intended to coat. In this paper, a TCO, specifically aluminum-doped zinc oxide (Al:ZnO), is combined with an underlying layer of silver nanowires (Ag-NW). This combination brings together the advantages of a closed, conductive Al:ZnO layer and a flexible Ag-NW layer, forming a TCE. The result is a transparency of 20–25% (within the 400–800 nm range) and a sheet resistance of 10 Ω/sq that remains almost unchanged, even after post-treatment at 180 °C.

Laser safety is starting to play an increasingly important role, especially when the laser is used as a tool. Passive laser safety systems quickly reach their limits and, in some cases, provide inadequate protection. To counteract this, various active systems have been developed. Flexible and especially textile-protective materials pose a special challenge. The market still lacks personal protective equipment (PPE) for active laser safety. Covering these materials with solar cells as large-area optical detectors offers a promising possibility. In this work, an active laser protection fabric with amorphous silicon solar cells is presented as a large-scale sensor for continuous wave and pulsed lasers (down to ns). First, the fabric and the solar cells were examined separately for irradiation behavior and damage. Laser irradiation was performed at wavelengths of 245, 355, 532, and 808 nm. The solar cell sensors were then applied directly to the laser protection fabric. The damage and destruction behavior of the active laser protection system was investigated. The results show that the basic safety function of the solar cell is still preserved when the locally damaged or destroyed area is irradiated again. A simple automatic shutdown system was used to demonstrate active laser protection within 50 ms.

Liquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c‐Si) wafers for solar cells. Due to substrate limitation, a low‐temperature technology is needed for solar cell fabrication. While silicon heterojunction is typically used, herein, the combination of vanadium oxide/c‐Si heterojunction as emitter and base contacts defined by IR laser processing of phosphorus‐doped amorphous silicon carbide stacks is explored. LPC solar cells are fabricated using such technologies to identify their issues and advantages with a promising performance of an active‐area efficiency of 5.6%. Apart from the absence of light‐trapping techniques, the relatively low efficiency obtained is attributed to a low lifetime in the LPC silicon bulk. These poor material properties imply a short diffusion length that makes it that only photogenerated carriers in the emitter regions can be collected. Consequently, future devices should show narrower base contact regions, suggesting a shorter‐wavelength laser, combined with longer LPC substrate lifetimes.

Three-dimensional flexible solar fabrics based on hydrogenated amorphous silicon (a-Si:H) thin film solar cells were prepared and characterized. A glass fiber fabric with a polytetrafluoroethylene (PTFE) coating proved to be a suitable textile substrate. Interwoven metal wires enable an integrated electrical interconnection. An array of solar cells consisting of an a-Si:H layer stack with a highly p-type/intrinsic/highly n-type doping profile was deposited onto it. Silver was used as the back contact with indium tin oxide (ITO) as the front contact. The best solar cells show an efficiency of 3.9% with an open-circuit voltage of 876 mV and a short-circuit current density of 11.4 mA/cm². The high series resistance limits the fill factor to 39%. The potential of the textile solar cells is shown by the achieved pseudo fill factor of 79% when neglecting the series resistance, resulting in a pseudo efficiency of 7.6%. With four textile solar cells connected in a series, an open-circuit voltage of about 3 V is achieved.

Fabrication and characterization of solar cells based on multicrystalline silicon (mc‐Si) thin films are described and synthesized from low‐cost soda‐lime glass (SLG). The aluminothermic redox reaction of the silicon oxide in SLG during low‐temperature annealing at 600 – 650 °C leads to an mc‐Si thin film with large grains of lateral dimensions in the millimeter range, and moderate p‐type conductivity with an average Al acceptor concentration between 5 × 10¹⁶ and 1.2 × 10¹⁷ cm⁻³ in the bulk. A residual composite layer of mainly alumina and unreacted Al forms beneath the mc‐Si thin film as the second product of the crystalline silicon synthesis (CSS) process, which can be used as rear contact in a vertical solar cell design. The mc‐Si absorber (≈10 µm) is thin enough that the diffusion length given by a minority carrier lifetime of ≈1 µs exceeds the path length to the top contact several times. Homojunction and heterojunction diodes have been fabricated on the mc‐Si thin films and show great potential of CSS for the realization of high‐performance solar cells.