Dr. Juan Fco. Sanchez-Royo
Materials Science Institute of the University of Valencia (ICMUV), c/ Dr. Moliner 50, 46100 Burjassot, Valencia (Spain)
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Academic Career Length
32Years (1995-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications19 April 2016 in Nano Letters
Journal Article
MBMauro Brotons-Gisbert
Mauro Brotons-GisbertDADaniel Andres-Penares
Daniel Andres-PenaresJSJoonki Suh
Joonki SuhFHFrancisco Hidalgo
Francisco HidalgoRARafael Abargues
Rafael AbarguesJuan Fco. Sanchez-Royo +8
Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.
20 April 2022 in Joule
Journal Article
JSJesús Sanchez-Diaz
Jesús Sanchez-Diaz
Rafael Sánchez SánchezSMSofia Masi
Sofia Masi
MKMarie Krecmarova
Marie KrecmarovaAAAgustín O. Alvarez
Agustín O. Alvarez
Ivan Mora-Sero +5
Despite the promising properties of tin-based halide perovskites, one clear limitation is the fast Sn+2 oxidation. Consequently, the preparation of long-lasting devices remains challenging. Here, we report a chemical engineering approach, based on adding Dipropylammonium iodide (DipI) together with a well-known reducing agent, sodium borohydride (NaBH4), aimed at preventing the premature degradation of Sn-HPs. This strategy allows for obtaining efficiencies (PCE) above 10% with enhanced stability. The initial PCE remained unchanged upon 5 h in air (60% RH) at maximum-power-point (MPP). Remarkably, 96% of the initial PCE was kept after 1,300 h at MPP in N2. To the best of our knowledge, these are the highest reported values for Sn-based solar cells. Our findings demonstrate a beneficial synergistic effect when additives are incorporated, highlight the important role of iodide in the performance upon light soaking, and, ultimately, unveil the relevance of controlling the halide chemistry for future improvement of Sn-based perovskite devices.
28 August 2014 in Nano Research
Journal Article
Juan Fco. Sanchez-RoyoGMGuillermo Muñoz-Matutano
Guillermo Muñoz-MatutanoMBMauro Brotons-Gisbert
Mauro Brotons-Gisbert
Juan Martínez PastorASAlfredo Segura
Alfredo SeguraBGBrian D. Gerardot
Brian D. Gerardot +6
The progressive stacking of chalcogenide single layers gives rise to two-dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness (as large as 0.2 eV for three single layers). First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies.
23 October 2009 in Angewandte Chemie International Edition
Journal Article
GAGloria Agustí
Gloria Agustí
RORyo Ohtani
Ryo OhtaniKYKo Yoneda
Ko Yoneda
AGAna B. Gaspar
Ana B. GasparMOMasaaki Ohba
Masaaki OhbaJRJosé A. Real
José A. Real +3
1 September 2010 in Applied Catalysis A: General
Journal Article
Tomas GarciaSASaid Agouram
Said AgouramJuan Fco. Sanchez-RoyoRMRamón Murillo
Ramón MurilloAMAna María Mastral
Ana María Mastral
Benjamin Solsona +3
2 May 2012 in Nanoscale
Journal Article
CBConcha Bosch-Navarro
Concha Bosch-Navarro
EMEugenio Coronado Miralles
Eugenio Coronado MirallesCMCarlos Martí-Gastaldo
Carlos Martí-GastaldoJuan Fco. Sanchez-RoyoMGMaria Isabel Gómez Gómez
Maria Isabel Gómez GómezHere we describe the important role played by the pH on the morphology and structure of the reduced graphite oxide (rGO) samples obtained by hydrothermal treatment of the previously prepared GO. The nature of the resulting samples has been studied on the basis of a complete battery of experimental techniques.
About Me
He is integrated in the unit of research of Optoelectronic Materials and Devices (UMDO) and is responsible for the Lowdim research line at the Materials Science Institute (ICMUV) of the University of Valencia, Spain. He received the B.S., and Ph.D. degrees in physics from the University of Valencia in 1992 and 1998, respectively. During his PhD, he performed two research stays at the Hahn-Meitner Institute of Berlin (Germany). After a postdoctoral stay (1999-2001) at the French-Spanish beamline at the LURE Synchrotron (France), he set up a research line devoted to the electronic characterization of materials by photoemission (UPS and XPS) at the University of Valencia. Since 2002 he occupies a permanent position at the University of Valencia and became Full Professor in October 2019. During this last period, he has also performed several research stays at SOLEIL Synchrotron (France), at University of California Berkeley (USA), and at Heriot-Watt University (UK). His current research interests include two-dimensional materials (layered semiconductors, topological insulators, and graphene), electronic and optoelectronic characterization of low-dimensional materials and related devices.