Light microscopy has greatly advanced our understanding of nature. The achievable resolution, however, is limited by optical wavelengths to ≈200 nm. By using imaging and labeling technologies, resolutions beyond the diffraction limit can be achieved for specialized specimens with techniques such as near-field scanning optical microscopy, stimulated emission depletion microscopy, and photoactivated localization microscopy. Here, we report a versatile soft x-ray diffraction microscope with 70- to 90-nm resolution by using two different tabletop coherent soft x-ray sources—a soft x-ray laser and a high-harmonic source. We also use field curvature correction that allows high numerical aperture imaging and near-diffraction-limited resolution of 1.5λ. A tabletop soft x-ray diffraction microscope should find broad applications in biology, nanoscience, and materials science because of its simple optical design, high resolution, large depth of field, 3D imaging capability, scalability to shorter wavelengths, and ultrafast temporal resolution.

The authors present a self-imaging lithographic technique, capable of patterning large area periodic structures of arbitrary content with nanoscale resolution. They start from the original concept of Talbot imaging of binary gratings—and introduce the generalized Talbot imaging (GTI) where periodic structures of arbitrary shape and content form high-definition self-images. This effect can be used to create the complex, periodic patterns needed in the many lithographic fabrication steps of modern semiconductor devices. Since the process is diffraction limited, the achievable resolution depends only on the wavelength, mask patterning, and degree of coherence of the source. Their approach removes all the complex extreme ultraviolet (EUV) reflective masks and optics, replacing them with nanopatterned transmission masks and makes the whole process simple and cost effective. They have successfully verified the GTI concept using first a He–Ne laser, and then demonstrated its potential as a nanolithography method using a compact table-top soft x-ray (EUV) $46.9\mathrm{nm}$ laser source. These sources provide the high degree of coherence needed by diffraction-based imaging and are extendable to shorter wavelengths. They have recorded EUV GTI images up to the sixth Talbot plane, with consistent high quality good results, clearly demonstrating the ability of the GTI method to record high-resolution patterns at large distances.

We have demonstrated near-wavelength resolution microscopy in the extreme ultraviolet. Images of $50\mathrm{nm}$ diameter nanotubes were obtained with a single $\sim 1\mathrm{ns}$ duration pulse from a desktop-size $46.9\mathrm{nm}$ laser. We measured the modulation transfer function of the microscope for three different numerical aperture zone plate objectives, demonstrating that $54\mathrm{nm}$ half-period structures can be resolved. The combination of near-wavelength spatial resolution and high temporal resolution opens myriad opportunities in imaging, such as the ability to directly investigate dynamics of nanoscale structures.

The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo/Si multi-layer mirrors and photo-etching of polymers.