Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors.

Quantum dots (QDs) are emerging as promising candidates for innovative memristive materials, owing to their distinct surface, quantum size, and edge effects. Recent research has focused on tailoring QDs with specific organic molecules to fine-tune charge transfer states between the host and grafted species, as well as enhancing their dispersibility and processability. Violet phosphorus (VP), a newly discovered two-dimensional phosphorus allotrope, offers excellent carrier dynamics, predictable modifiability, and superior oxidation resistance, making it a promising contender in this domain. In this study, we synthesized a rich azobenzene-containing star-shaped polymer diazonium salt (AzoSPD) to functionalize violet phosphorus quantum dots (VPQDs), with the dual objectives of enhancing organic dispersibility and introducing photo-switching capabilities. The synthesized AzoSPD–VPQDs exhibit intramolecular charge transfer characteristics under electrical stimuli of ambient conditions, displaying significant non-volatile rewriteable memory properties and a substantial switching ratio exceeding 2 × 10³. Furthermore, the high resistance state (HRS) current can be enhanced by nearly 40 times under 465 nm illumination, enabling optoelectronic information sensing and storage within a single device. This work not only provides insights into enhancing the optoelectronic properties of QDs through functional organic molecular modification but also represents a pioneering exploration of the potential applications of VPQDs in novel memristors.