Continuous, coherent subterahertz radiation arises when a dc voltage is applied across a stack of the many intrinsic Josephson junctions in a Bi2Sr2CaCu2O8+$\delta${} single crystal. The active junctions produce an equal number of I-V characteristic branches. Each branch radiates at a slightly tunable frequency obeying the Josephson relation. The overall output is broadly tunable and nearly independent of heating effects and internal cavity frequencies. Amplification by a surrounding external cavity to allow for the development of a useful high-power source is proposed.

Current compact emitter and receiver technologies are generally inefficient and impractical at terahertz (THz) frequencies between 0.1 and 10 THz. Hence, a gap exists between mature microwave and developed optical technologies. On-chip, integrated broadly tunable and powerful quantum sources that coherently radiate THz waves between 0.1 and 11 THz (potentially extendable to 15 THz) and with potential output power of >1 mW can be achieved based on quantum tunneling of electron pairs across the stack of intrinsic Josephson junctions (IJJs) naturally present in a single crystal of the layered high-Tc superconducting Bi2Sr2CaCu2O8+δ (BSCCO). Such devices have been found to be especially promising solid-state THz sources capable of bridging the entire THz gap, as their wide-frequency tunability range is superior to that obtained from their semiconducting-based rivals, either single resonant-tunneling diodes (RTDs) or THz-quantum cascade lasers (QCLs). Due to the unique electrodynamics of BSCCO, they can also be operated as switching current detectors, paving the way for the realization of on-chip THz-integrated circuits for applications in ultrahigh-speed telecommunications, quantum information, on-chip spectroscopy, and nondestructive sensing, testing, and imaging. This article reviews the history and recent advances in THz sources and detectors based on IJJs with a focus on the application of IJJ THz devices in THz spectroscopy and various types of THz imaging systems such as reflection, transmission, and computed tomography. We show that compact IJJ THz devices with sub-centimeter-sized modules are easy to use in many applications, as they can be regarded as pocket quantum THz torches.

To obtain higher power P and frequency f emissions from the intrinsic Josephson junctions in a high-T_c superconducting Bi₂Sr₂CaCu₂O_8+δ single crystal, we embedded a rectangular stand-alone mesa of that material in a sandwich structure to allow for efficient heat exhaust. By varying the current-voltage (I-V) bias conditions and the bath temperature T_b, f is tunable from 0.3 to 1.6 THz. The maximum P of a few tens of μW, an order of magnitude greater than from previous devices, was found at $T_{\mathrm{b}}\sim 55\hspace{0.17em}\mathrm{K}$ on an inner I-V branch at the TM(1,0) cavity resonance mode frequency. The highest f of 1.6 THz was found at $T_{\mathrm{b}}=10\hspace{0.17em}\mathrm{K}$ on an inner I–V branch, but away from cavity resonance frequencies. A possible explanation is presented.

Coherent and continuous radiation sources of the electromagnetic (EM) waves at terahertz (1 THz = 10¹² c/s) frequencies using a mesa structure fabricated from high temperature superconducting Bi₂Sr₂CaCu₂O_8+δ single crystals are described with a special emphasis on the physics of the radiation mechanism and the applications. After the intensive studies of many mesas fabricated with different conditions, it is revealed that the ac-Josephson effect works as a primary driving mechanism of the radiation and the cavity resonance needed for stronger radiation plays an additional role to the mechanism, although both are working together while radiating. A prototype of the imaging machine for multipurpose uses has successfully been developed.

Metamaterial photonic integrated circuits with arrays of hybrid graphene–superconductor coupled split-ring resonators (SRR) capable of modulating and slowing down terahertz (THz) light are introduced and proposed. The hybrid device’s optical responses, such as electromagnetic-induced transparency (EIT) and group delay, can be modulated in several ways. First, it is modulated electrically by changing the conductivity and carrier concentrations in graphene. Alternatively, the optical response can be modified by acting on the device temperature sensitivity by switching Nb from a lossy normal phase to a low-loss quantum mechanical phase below the transition temperature (T_c) of Nb. Maximum modulation depths of 57.3% and 97.61% are achieved for EIT and group delay at the THz transmission window, respectively. A comparison is carried out between the Nb-graphene-Nb coupled SRR-based devices with those of Au-graphene-Au SRRs, and significant enhancements of the THz transmission, group delay, and EIT responses are observed when Nb is in the quantum mechanical phase. Such hybrid devices with their reasonably large and tunable slow light bandwidth pave the way for the realization of active optoelectronic modulators, filters, phase shifters, and slow light devices for applications in chip-scale future communication and computation systems.

A superconducting hard gap in hybrid superconductor–semiconductor devices has been found to be necessary to access topological superconductivity that hosts Majorana modes (non‐Abelian excitation). This requires the formation of homogeneous and barrier‐free interfaces between the superconductor and semiconductor. Here, a new platform is reported for topological superconductivity based on hybrid Nb–In_0.75Ga_0.25As‐quantum‐well–Nb that results in hard superconducting gap detection in symmetric, planar, and ballistic Josephson junctions. It is shown that with careful etching, sputtered Nb films can make high‐quality and transparent contacts to the In_0.75Ga_0.25As quantum well, and the differential resistance and critical current measurements of these devices are discussed as a function of temperature and magnetic field. It is demonstrated that proximity‐induced superconductivity in the In_0.75Ga_0.25As‐quantum‐well 2D electron gas results in the detection of a hard gap in four out of seven junctions on a chip with critical current values of up to 0.2 µA and transmission probabilities of >0.96. The results, together with the large g‐factor and Rashba spin–orbit coupling in In_0.75Ga_0.25As quantum wells, which indeed can be tuned by the indium composition, suggest that the Nb–In_0.75Ga_0.25As–Nb system can be an excellent candidate to achieve topological phase and to realize hybrid topological superconducting devices.