Herein, thin film and single crystal phototransistors based on 2,6-bis(4-methoxyphenyl)anthracene (BOPAnt) are systematically studied. High quality BOPAnt single crystals are grown via the PVT (physical vapor transport) method to fabricate bottom gate top contact phototransistors. The thin film phototransistor shows a photoresponsivity of 9.75 A W−1 under 1 mW cm−2 blue LED illumination, whereas under the same conditions the single crystal based phototransistor displays a photoresponsivity of 414 A W−1. Furthermore, using low power monochromatic light with the wavelength of 350 nm, the photoresponsivity of 3100 A W−1 under 0.11 mW cm−2 illumination and EQE of 9.5 × 105% are obtained for the BOPAnt single crystal phototransistor with the channel length of 65 μm. The much higher photoresponsivity of the single crystal based phototransistor is due to its much higher exciton diffusion length compared to that of the thin film device, which is also evident by the large Von shift towards the positive voltage direction. The photoswitching behaviors of the single crystal based phototransistor are also studied. It is observed that after a short warming up period, the single crystal based phototransistor shows stable switching behavior.
17 December 2020 in ACS Applied Materials & Interfaces
Introduction of highly lipophilic electron withdrawing trifluoromethanesulfenyl (SCF 3 ) group is an effective approach to improve the air stability of n-channel organic thin film transistors.
28 November 2016 in Journal of Materials Chemistry C
In-plane isotropic charge transport single crystal FET with mobility exceeding 15 cm 2 V −1 s −1 is obtained, the result is desirable in large-area single-crystal FET arrays.
This study reports two novel n-channel pyromellitic diimide (PyDI) derivatives, PyDI-BOCF3 and PyDI-BSCF3, with particularly wide energy gaps of 3.56 eV and 3.49 eV in the solid state, respectively, which induce the investigations of their charge transport properties, photostabilities and thin-film transparency of organic field-effect transistors (OFETs) in this work. Although PyDI-BOCF3 and PyDI-BSCF3 exhibit similar two-dimensional (2D) lamellar packing motifs, PyDI-BSCF3 demonstrates stronger electronic couplings than those of PyDI-BSCF3, suggesting it may show better electrical performance in OFETs. As predicted, PyDI-BSCF3 shows an electron mobility of 0.09 cm2 V−1 s−1 at a deposition temperature of 70 °C in ambient air, which is higher than the electron mobility of 0.058 cm2 V−1 s−1, obtained for PyDI-BOCF3. In contrast, PyDI-BOCF3 exhibits better thermal stability of mobility, which was maintained at ∼0.056 cm2 V−1 s−1 after increasing the deposition temperature from room temperature (RT) to 70 °C. More importantly, it is worth mentioning that the wide energy gaps of PyDI-BOCF3 and PyDI-BSCF3 lead to excellent photostability in OFETs at illumination conditions and optical transparency in the visible range even better than that of DPh-BTBT thin films on transparent glass and flexible PET substrates.