Dongwei Zhang

Dongwei Zhang


Research Focus & Metrics

Academic Career Length

11Years (2016-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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12 May 2017 in Journal of Materials Chemistry C
Verified
Journal Article
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ALAiyuan Li
Aiyuan Li
LYLijia Yan
Lijia Yan
MLMing Liu
Ming Liu
IMImran Murtaza
Imran Murtaza
CHChao He
Chao He
Hong MengHong Meng
Hong Meng
Herein, thin film and single crystal phototransistors based on 2,6-bis(4-methoxyphenyl)anthracene (BOPAnt) are systematically studied. High quality BOPAnt single crystals are grown via the PVT (physical vapor transport) method to fabricate bottom gate top contact phototransistors. The thin film phototransistor shows a photoresponsivity of 9.75 A W−1 under 1 mW cm−2 blue LED illumination, whereas under the same conditions the single crystal based phototransistor displays a photoresponsivity of 414 A W−1. Furthermore, using low power monochromatic light with the wavelength of 350 nm, the photoresponsivity of 3100 A W−1 under 0.11 mW cm−2 illumination and EQE of 9.5 × 105% are obtained for the BOPAnt single crystal phototransistor with the channel length of 65 μm. The much higher photoresponsivity of the single crystal based phototransistor is due to its much higher exciton diffusion length compared to that of the thin film device, which is also evident by the large Von shift towards the positive voltage direction. The photoswitching behaviors of the single crystal based phototransistor are also studied. It is observed that after a short warming up period, the single crystal based phototransistor shows stable switching behavior.

17 December 2020 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
DZDongwei Zhang
Dongwei Zhang
SYSo Yokomori
So Yokomori
RKRyohei Kameyama
Ryohei Kameyama
CZChangbin Zhao
Changbin Zhao
AUAkira Ueda
Akira Ueda
HMHatsumi Mori
Hatsumi Mori

21 December 2016 in Journal of Materials Chemistry C
Verified
Journal Article
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LZLiang Zhao
Liang Zhao
DZDongwei Zhang
Dongwei Zhang
YZYanan Zhu
Yanan Zhu
SPSen Peng
Sen Peng
Hong MengHong Meng
Hong Meng
WHWei Huang
Wei Huang
Introduction of highly lipophilic electron withdrawing trifluoromethanesulfenyl (SCF 3 ) group is an effective approach to improve the air stability of n-channel organic thin film transistors.

28 November 2016 in Journal of Materials Chemistry C
Verified
Journal Article
Closed access
PDF file
ALAiyuan Li
Aiyuan Li
LYLijia Yan
Lijia Yan
CHChao He
Chao He
YZYanan Zhu
Yanan Zhu
DZDongwei Zhang
Dongwei Zhang
OGOsamu Goto
Osamu Goto
In-plane isotropic charge transport single crystal FET with mobility exceeding 15 cm 2 V −1 s −1 is obtained, the result is desirable in large-area single-crystal FET arrays.

26 April 2023 in Dyes and Pigments
Verified
Journal Article
Closed access
DZDongwei Zhang
Dongwei Zhang
CZChangbin Zhao
Changbin Zhao
XZXiwei Zheng
Xiwei Zheng
LWLijie Wu
Lijie Wu
JXJinhao Xu
Jinhao Xu
YHYaowu He
Yaowu He

29 April 2020 in Journal of Materials Chemistry C
Verified
Journal Article
Closed access
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JWJianing Wang
Jianing Wang
HYHuinan Yu
Huinan Yu
TFTianchen Fu
Tianchen Fu
CZChangbin Zhao
Changbin Zhao
HYHongtao Yu
Hongtao Yu
WHWei Huang
Wei Huang
This study reports two novel n-channel pyromellitic diimide (PyDI) derivatives, PyDI-BOCF3 and PyDI-BSCF3, with particularly wide energy gaps of 3.56 eV and 3.49 eV in the solid state, respectively, which induce the investigations of their charge transport properties, photostabilities and thin-film transparency of organic field-effect transistors (OFETs) in this work. Although PyDI-BOCF3 and PyDI-BSCF3 exhibit similar two-dimensional (2D) lamellar packing motifs, PyDI-BSCF3 demonstrates stronger electronic couplings than those of PyDI-BSCF3, suggesting it may show better electrical performance in OFETs. As predicted, PyDI-BSCF3 shows an electron mobility of 0.09 cm2 V−1 s−1 at a deposition temperature of 70 °C in ambient air, which is higher than the electron mobility of 0.058 cm2 V−1 s−1, obtained for PyDI-BOCF3. In contrast, PyDI-BOCF3 exhibits better thermal stability of mobility, which was maintained at ∼0.056 cm2 V−1 s−1 after increasing the deposition temperature from room temperature (RT) to 70 °C. More importantly, it is worth mentioning that the wide energy gaps of PyDI-BOCF3 and PyDI-BSCF3 lead to excellent photostability in OFETs at illumination conditions and optical transparency in the visible range even better than that of DPh-BTBT thin films on transparent glass and flexible PET substrates.