Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn₃Sn. The magnetic group symmetry of Mn₃Sn allows generation of the out-of-plane spin current carrying spin polarization collinear to its direction induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing the deterministic switching of the perpendicular magnetization of an adjacent Ni/Co multilayer. Due to being odd with respect to time reversal symmetry, the observed magnetic spin Hall effect and the resulting spin-orbit torque can be reversed with reversal of the antiferromagnetic order. Contrary to the conventional spin-orbit torque devices, the demonstrated magnetization switching does not need an external magnetic field and requires much lower current density which is useful for low-power spintronics.

The orbital Hall effect in light materials has attracted considerable attention for developing orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material, i.e., Zr. The orbital torque efficiency of approximately 0.78 is achieved in the Zr orbital Hall material with the perpendicularly magnetized [Co/Pt]₃ sample, which significantly surpasses that of the perpendicularly magnetized CoFeB/Gd/CoFeB sample (approximately 0.04). Such a notable difference is attributed to the different spin-orbit correlation strength between the [Co/Pt]₃ sample and the CoFeB/Gd/CoFeB sample, confirmed through theoretical calculations. Furthermore, the full magnetization switching of the [Co/Pt]₃ samples with a switching current density of approximately 2.6×10⁶A/cm² has been realized through Zr, which even outperforms that of the W spin Hall material. Our finding provides a guideline to understand orbital torque efficiency and paves the way for developing energy-efficient orbitronic devices.

Electric field is an energy-efficient tool that can be leveraged to control spin–orbit torques (SOTs). Although the amount of current-induced spin accumulation in a heavy metal (HM)/ferromagnet (FM) heterostructure can be regulated to a certain degree using an electric field in various materials, the control of its direction has remained elusive so far. Here, we report that both the direction and amount of current-induced spin accumulation at the HM/FM interface can be dynamically controlled using an electric field in an oxide capped SOT device. The applied electric field transports oxygen ions and modulates the HM/FM interfacial chemistry resulting in an interplay between the spin Hall and the interfacial torques which in turn facilitates a non-volatile and reversible control over the direction and magnitude of SOTs. Our electric-field controlled spin-orbitronics device can be programmed to behave either like the SOT systems with a positive spin Hall angle or a negative spin Hall angle.