It has been recognized that p-Coumaric acid (p-CA) has protective effects as an antioxidant, anti-inflammatory agent. A sensitive and efficient Liquid Chromatography-Mass Spectrometry (LC-MS) method for maximum determination of p-CA in human plasma has been established using Ultra-performance liquid Chromatography-tandem mass Spectrometry (UPLC-MS/MS). This study provides the developed analysis of p-CA extracted from Bambusae Caulis in Taeniam (BC) to examine the improvement of the treatment p-CA, IGF-1 and Osteocalcin level in human children which are important factors on the growth of children’s height through Pharmacokinetics/Pharmacodynamics (PK/PD) model. p-CA and internal standard in a plasma sample were detected by the Multiple Reaction Monitoring (MRM) scan mode with positive ion detection. The sample participating in the study was made of 34 subjects (placebo = 18, treatment = 16). The subjects were enrolled to be randomized to the control group and BC group. Randomized subjects took tested treatment twice a day, three capsules with oral administration (258 mg/capsule) each time after a meal. Standard calibration curves (reproducibility) were constructed and the lower limit of quantitation (LLOQ) for p-CA was found to be 0.2 ng/mL on injection of the sample into the UPLC-MS/MS system. Accuracy and precision were evaluated and the intra-accuracy was 99.2–103.8% with precision of 1.0–5.6% and inter-accuracy was 99.6–108.4% and precision of 1.3–6.4% for p-CA. The method has been successfully applied to PK/PD studies of p-CA in human plasma. The p-CA, BC in Taeniam extract increased the level of IGF-1 and Osteocalcin, and changed the height from baseline, which suggested that the p-CA could play an important role in longitudinal bone growth. Therefore, the p-CA extracted from BC in Taeniam might be a good alternative medicine to growth hormone (GH) therapy.

To realize oxide semiconductor-based complementary circuits and better transparent display applications, the electrical properties of p-type oxide semiconductors and the performance improvement of p-type oxide thin-film transistors (TFTs) are required. In this study, we report the effects of post-UV/ozone (O₃) treatment on the structural and electrical characteristics of copper oxide (CuO) semiconductor films and the TFT performance. The CuO semiconductor films were fabricated using copper (II) acetate hydrate as a precursor material to solution processing and the UV/O₃ treatment was performed as a post-treatment after the CuO film was fabricated. During the post-UV/O₃ treatment for up to 13 min, the solution-processed CuO films exhibited no meaningful change in the surface morphology. On the other hand, analysis of the Raman and X-ray photoemission spectra of solution-processed CuO films revealed that the post-UV/O₃ treatment induced compressive stress in the film and increased the composition concentration of Cu–O lattice bonding. In the post-UV/O₃-treated CuO semiconductor layer, the Hall mobility increased significantly to approximately 280 cm² V⁻¹ s⁻¹, and the conductivity increased to approximately 4.57 × 10⁻² Ω⁻¹ cm⁻¹. Post-UV/O₃-treated CuO TFTs also showed improved electrical properties compared to those of untreated CuO TFTs. The field-effect mobility of the post-UV/O₃-treated CuO TFT increased to approximately 6.61 × 10⁻³ cm⁻² V⁻¹ s⁻¹, and the on-off current ratio increased to approximately 3.51 × 10³. These improvements in the electrical characteristics of CuO films and CuO TFTs can be understood through the suppression of weak bonding and structural defects between Cu and O bonds after post-UV/O₃ treatment. The result demonstrates that the post-UV/O₃ treatment can be a viable method to improve the performance of p-type oxide TFTs.

The density of donor-like state distributions in solution-processed indium–zinc-oxide (IZO) thin-film transistors (TFTs) is thoroughly analyzed using photon energy irradiation. This study focuses on quantitatively calculating the distribution of density of states (DOS) in IZO semiconductors, with a specific emphasis on their variation with indium concentration. Two calculation methods, namely photoexcited charge collection spectroscopy (PECCS) and photocurrent-induced DOS spectroscopy (PIDS), are employed to estimate the density of the donor-like states. This dual approach not only ensures the accuracy of the findings but also provides a comprehensive perspective on the properties of semiconductors. The results reveal a consistent characteristic: the Recombination–Generation (R-G) center energy E_T, a key aspect of the donor-like state, is acquired at approximately 3.26 eV, irrespective of the In concentration. This finding suggests that weak bonds and oxygen vacancies within the Zn-O bonding structure of IZO semiconductors act as the primary source of R-G centers, contributing to the donor-like state distribution. By highlighting this fundamental aspect of IZO semiconductors, this study enhances our understanding of their charge-transport mechanisms. Moreover, it offers valuable insight for addressing stability issues such as negative bias illumination stress, potentially leading to the improved performance and reliability of solution-processed IZO TFTs. The study contributes to the advancement of displays and technologies by presenting further innovations and applications for evaluating the fundamentals of semiconductors.

In this study, we systematically decoupled reversible charge transitions via recombination and irreversible bulk trapping via ionization in solution-processed indium zinc oxide thin-film transistors (TFTs) under positive- and negative-bias-stress (PBS and NBS) conditions. We defined highly decoupled degradation behavior by completely evaluating time-dependent transfer characteristics and saturation leakage currents across a range of indium molarities (0.0125 M to 0.2 M). Results indicate that PBS-induced instability is likely governed by a reversible electrostatic neutralization process reducing total effective shallow and deep acceptor-like states, which are dynamically counteracted by interfacial recombination at the dielectric/semiconductor boundary. Conversely, severe degradation under NBS originated from irreversible bulk trapping triggered by the ionization of donor-like oxygen vacancies in a ZnO amorphous random network. Total effective trapped charges were calculated from threshold voltage shifts to clarify these defect kinetics quantitatively; these calculations demonstrated direct correlation with the integrated theoretical capacities of the deep and shallow acceptor-like gap-state distributions. Finally, we propose a comprehensive density of state–energy band alignment model incorporating thermal activation energies and flat-band voltages. This analytical framework proves that the composition-dependent Fermi level positioning rigorously limits and dictates complex bias-stress instabilities, offering profound insights for designing highly stable amorphous oxide semiconductor TFTs.

This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solution-processed indium oxide (In₂O₃) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, 450, and 550 °C were adopted. The resulting In₂O₃ films were characterized using ultraviolet–visible (UV–Vis) spectroscopy, atomic force microscopy (AFM), Raman spectroscopy, and Hall-effect measurements to evaluate their optical, morphological, crystalline polymorphism, and electrical properties. The results revealed that the film annealed at 450 °C exhibited a field-effect mobility of 4.28 cm²/V·s and an on/off current ratio of 2.15 × 10⁷. The measured hysteresis voltages were 3.11, 1.80, and 0.92 V for annealing temperatures of 350, 450, and 550 °C, respectively. Altogether, these findings indicate that an annealing temperature of 450 °C provides an optimal balance between the electrical performance and device stability for In₂O₃-based thin-film transistors (TFTs), making this condition favourable for high-performance oxide electronics.

Unencapsulated solution-processed oxide-semiconductor transistors suffer from cross-sensitivity and baseline instability. In this study, we systematically investigate the field-effect transport kinetics and species-dependent gas interaction dynamics of solution-processed amorphous indium zinc oxide thin-film transistors across pressure state transitions (760–10⁻³ Torr) and single-gas purging environments (N₂, O₂, Ar, CO₂, and humid air > 90% relative humidity). Our experimental findings indicate that atmospheric pressure variations dictate bulk channel conduction via free-carrier density shifts, whereas relative humidity drives parasitic gate (I_G)/surface leakage currents (I_surface) through moisture-mediated interfacial trap creation. Purging tests reveal a nonpolar sensing window where N₂ promotes bulk carrier accumulation, while Ar drives carrier depletion without degrading gate dielectric insulation. Electrophilic O₂ suppresses channel current while increasing I_G, whereas CO₂ exhibits total electrical invariance. Real-time pulse-switching measurements confirm high detection fidelity (maximum signal-to-noise ratio > 30 dB for N₂ and Ar) with excellent recovery. Correlating these dynamic responses with an exponential sub-bandgap density-of-states model establishes key principles for developing unencapsulated oxide chemical sensors that can discriminate complex gas–species mixtures in real-world ambient environments.