The controlled graphene size affected the dielectric performance of graphene encapsulated BaTiO ₃ (rGO@BTO) particles. The dielectric performance increased by 33% higher than the dielectric constant after 1 h, while maintaining the low dielectric loss.

Thermo-compression bonding (TCB) properties of Cu/SnAg pillar bumps on electroless palladium immersion gold (EPIG) were evaluated in this study. A test chip with Cu/SnAg pillar bumps was bonded on the surface-finished Cu pads with the TCB method. The surface roughness of the EPIG was 82 nm, which was 1.6 times higher than that of the ENEPIG surface finish because the EPIG was so thin that it could not flatten rough bare Cu pads. From the cross-sectional SEM micrographs, the filler trapping of the TC-bonded EPIG was much higher than that of the ENEPIG sample. The high filler trapping of the EPIG sample was due to the high surface roughness of the EPIG surface finish. The contact resistance increased as the thermal cycle time increased. The increase of the contact resistance with 1500 cycles of the thermal cycle test was 26% higher for the EPIG sample than for the ENEPIG sample.