The structure and dielectric properties of Sm_1.5Sr_0.5Ni_1−x Al _x O₄ (x = 0.3, 0.5) ceramics were presented. A single orthorhombic phase was obtained in Sm_1.5Sr_0.5Ni_0.7Al_0.3O₄ ceramics, while minor impurities existed in Sm_1.5Sr_0.5Ni_0.5Al_0.5O₄ ceramics. Temperature stable giant dielectric response was observed in these two ceramics, and only one dielectric relaxation was found. After comparing the activation energies of dielectric relaxation and electrical conduction, the giant dielectric response should be attributed to the adiabatic small polaronic hopping process, and the dielectric behaviour of the samples with different aluminium contents confirmed the correlation between the dielectric response and electrical conduction.

In this study, InSb p-i-n photodetectors with In_0.82Al_0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In_0.82Al_0.18Sb barrier layer increased the 77 K R₀A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 10⁹ cmHz^1/2W⁻¹ at 5.3 µm.