This paper reports on a study of crystallization of thin lead zirconate-titanate films deposited on Si/SiO2/Pt substrates by RF magnetron sputtering at a low temperature and annealed at 540–580°C. In...

A study has been performed of the mechanisms underlying evolvement of excess lead oxide from lead zirconate titanate films grown ex-situ in two different regimes by magnetron sputtering. In the first...

Structural characterization of the epitaxial thin aluminum nitride (AlN) 1-μm-thick films grown on SiC/(111)Si substrate by molecular beam epitaxy method was done. The films are shown to be single crystals of (0002) orientation with parameter full width half maximum FWHMω_θ = 0.5°. A comparative study of the film electrical properties with the films grown by chloride vapor-phase epitaxy has revealed the difference in polar axis orientation, pyroelectric response, and piezoelectric hystograms.

This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride–hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on...

It has been shown that 300-nm-thick polycrystalline films of lead zirconate titanate (PZT), the compositions of which correspond to the region of morphotropic phase boundary, undergo anomalous...

The structural properties of ferroelectric films of barium titanate-stannate on alumina substrates and the microwave characteristics of planar capacitive elements based on them are studied. It is established that the composition of the gas medium and the temperature of the substrate during the deposition of the film has a significant effect on the crystal structure, phase composition of the films and their electrical characteristics. Planar capacitors based on films subjected to high-temperature annealing after deposition exhibit 85% tunability at a frequency of 2 GHz, which is the best result for today.