Thermal aging is one of the main reasons for the degradation of insulation properties of high voltage cable. Dielectric properties and breakdown strength are important parameters to reflect the insulation performance of the cable insulation materials. In the work, the influence of thermal aging on dielectric and breakdown performance of the cable insulation layer was studied. Firstly, XLPE cable insulation samples were prepared and the thermal aging treatment was carried out. Secondly, the microstructure and molecular structure of XLPE samples under different thermal aging time were analyzed. The dielectric properties and breakdown characteristics of XLPE samples under different thermal aging times were characterized in macro aspect. Finally, the effects of different temperatures on the molecular microstructure of XLPE were studied. The results show that with the extension of thermal aging time, the microstructure of XLPE molecule is destroyed, the macromolecular chain is gradually cleaved, and the carbonyl absorption intensity increases. At power frequency, the breakdown strength decreases from 75.37 kV/mm to 62.18 kV/mm, the relative permittivity increases from 2.44 to 2.51, and the dielectric loss increases from 1.47 × 10⁻⁴ to 3.10 × 10⁻³. The free volume rate of XLPE molecules increases with the increasing temperature, and the mean square displacement gradually increases. The work has good guiding significance for the safe operation and condition assessment of high-voltage cables.

The combined insulation interface of a high-voltage cable and accessories is the weakest part of a cable system. In this paper, the parameters of the dielectric constant, thermal conductivity, and elastic modulus of cross-linked polyethylene (XLPE) and silicone rubber (SIR) are obtained experimentally. On this basis, the model of a specific type of 110 kV cable and prefabricated insulation joint is established. A simulation of the electric–thermal–stress coupling field in the presence of typical defects in the main insulation–inner semi-conductive (SEMI) shielding layer (XLPE/SEMI interface) and the main insulation–silicone rubber insulation layer (XLPE/SIR interface) is studied. The simulation results show that at the XLPE/SIR interface, the electric field distortion caused by bubble defects reached 20.17 kV/mm, and the temperature rose to 56.15 °C. The effect of air-gap defects on the interface is similar to that of bubble defects. In addition, the semi-conductive impurity defects induced an increase in temperature to 56.82 °C and an increase in stress to 0.32 MPa. At the XLPE/SEMI interface, the electric field distortion induced by bubble defects was 19.98 kV/mm, and the temperature rose to 61.72 °C. The electric field distortion caused by metallic and semi-conductive defects was 8.44 kV/mm and 8.64 kV/mm, respectively. This study serves as a reference for the fault analysis and the operation and maintenance of cable accessories.