This research investigates four variants of Gaussian Doped (GD) Double Gate Single Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) to optimize their performance in analog and RF applications. The analysis is conducted using the Sentaurus Synopsis TCAD simulation tool, reveals a Subthreshold Swing (SS) as low as 38 mV/dec, exceptionally higher cut-off-frequency (f _t ) and maximum-oscillation-frequency ( f max ) of 516 GHz and 895 GHz, respectively. The proposed TMDG-JF-TFET enhances band-to-band tunneling between the drain and source regions, resulting in an extremely low-off-state-current (I _off) of 9.6 fA and large-on-state current (I _ON) of 6.7 mA in Permittivity of high-k (HfO ₂ = 25) and low-k (SiO ₂ = 3.8) based structures.Compared to conventional SMDG technologies, the TMDG structures exhibits 36% reduction in SS, a 16% improvement in f _t , an 18% enhancement in f max and 17% increase in I _ON. These improvements demonstrate that TMDG-based TFETs are superior devices for ultra-low-power-integrated-circuit-applications.

In this research, the performance of homogeneous narrow-bandgap (NBG) and wide-bandgap (WBG) materials in dual-gate junction-free tunnel field-effect transistors (DG-JF-TFETs) is evaluated, highlighting their potential for advanced mixed-signal applications. For the first time, the performance analysis of NBG materials, including Germanium (Ge), Silicon (Si), Gallium Antimonide (GaSb) and Aluminum Gallium Arsenide (AlGaAs), is presented alongside WBG materials such as Gallium Nitride (GaN) and Aluminum Nitride (AlN). Both categories exhibit a consistent off-state current (I _off = 9.6 fA). Among NBG materials, AlGaAs shows exceptional performance compared to conventional TFET structures, achieving a maximum cutoff frequency (f _t ) of 728 GHz, a transconductance (g _m ) of 8.62 × 10⁻³ S μm⁻¹, and a maximum oscillation frequency (f _max) of 801 GHz. In contrast, WBG materials exhibit slightly lower performance, with f _max = 692 GHz and f _t = 591 GHz.NBG materials outperform WBG materials by delivering a 10.7% higher on/off current ratio I on I off , a 35% increase in transconductance, a 35.52% improvement in f _max, and a 13.23% higher f _t . This analysis identifies NBG materials, particularly AlGaAs, as superior performers for DG-JF-TFET structures, making the proposed homogeneous design highly promising for next generation mixed-signal applications.

In this research, the gate stack engineering in InP-based double gate junctionless tunnel field effect transistors (DG-JL-TFETs) aims at enhancing analog/RF performance for next-generation wireless communication systems. The impact of different high- k gate oxide materials-Al 2 O 3 , Ga 2 O 3 , GeO 2 , and HfO 2 -on critical device metrics such as I on , I off , threshold voltage ( V t , transconductance ( g m ), output conductance ( g d ), cut-off frequency ( f t ), maximum oscillation frequency ( f max ), and subthres Among the materials studied, GeO 2 demonstrates superior performance with the highest f t of 247 GHz and f max of 995 GHz, owing to its low V t (0.06 V) and high g m ( 5 × 10 − 3 S), making it highly suitable for high-speed, low-power RF circuits. Ga 2 O 3 also exhibits promising characteristics with enhanced g m and substantial frequency gains. HfO 2 offers excellent control over leakage with a low g d and favorable SS. The comprehensive comparison reveals that careful gate oxide selection in InP-based DG-JL-TFETs plays a pivotal role in optimizing device performance, particularly for analog/RF applications in advanced wireless systems.