The micro-arc oxidation process was used to apply a ceramic oxide coating on a pure titanium substrate using calcium acetate and sodium dihydrogen phosphate as an electrolyte. The influence of the current frequency and duty ratio on the surface morphology, phase composition, wear behavior, and corrosion resistance were analyzed by employing a scanning electron microscope, X-ray diffractometer, ball-on-disk apparatus, and potentiodynamic polarization, respectively. Analyses of the surface and cross-sectional morphologies revealed that the MAO films prepared via a low current frequency (100 Hz) and a high duty ratio (60%) had a lower porosity and were more compact. The medium (500 Hz) and high (1000 Hz) frequencies at the higher duty ratios presented with better wear resistance. The highest film thickness (11.25 µm) was achieved at 100 Hz and a 20% duty ratio. A negligible current density was observed when the frequency was fixed at 500 Hz and 1000 Hz and the duty cycle was 20%.

Embrittlement induced by high-temperature tempering was investigated in two quenched-and-tempered offshore steels. Electron backscattering diffraction and analysis of Kernel average misorientation were applied to study the coalescence of martensite; transmission Kikuchi diffraction coupled with compositional mapping was used to characterize the martensite/austenite (M/A) phases. It is suggested that the formation of lenticular martensite along prior austenite grain boundaries or packet boundaries primarily explains the embrittlement in conventional S690Q steel, which has a higher carbon content. This embrittlement can be cured by additional heat treatment to decompose martensite into ferrite and cementite. In a newly designed NiCu steel with reduced carbon content, new lath martensite formed along interlath or inter-block boundaries of prior martensite. This microstructure is less detrimental to the impact toughness of the steel.

AlN thin films were epitaxially grown on a 4H-SiC substrate via atomic layer deposition (ALD) along with atomic layer annealing (ALA). By applying the layer-by-layer, in situ ALA treatment using helium/argon plasma in each ALD cycle, the as-deposited film gets crystallization energy from the plasma, which results in significant enhancement of the crystal quality to achieve a highly crystalline AlN epitaxial layer at a deposition temperature as low as 300 °C. In a nanoscale AlN epitaxial layer with a thickness of ∼30 nm, X-ray diffraction reveals a low full-width-at-half-maximum of the AlN (0002) peak of only 176.4 arcsec. Atomic force microscopy, high-resolution transmission electron microscopy, and Fourier diffractograms indicate a smooth surface and high-quality hetero-epitaxial growth of a nanoscale AlN layer on 4H-SiC. This research demonstrates the impact of the ALA treatment on the evolution of ALD techniques from conventional thin film deposition to low-temperature atomic layer epitaxy.