This paper presents the simulation of the novel prototype of a heterojunction perovskite solar cell (PSC) based on C_SGeI₂Br/C_SGeI₃. The device consists of two absorber layers (C_SGeI₂Br, C_SGeI₃), an electron transport layer (ETL) chosen as TiO₂ and a hole transport layer (HTL) given as poly(3-hexylthiophene) (P3HT). Within the simulation, the effects of thickness, doping and defect density in each absorber layer and different back contact metal electrodes on electrical parameters (efficiency, short circuit current, open circuit voltage, and fill factor) are evaluated. In addition, the contribution of the HTL (doping density and thickness), temperature, shunt and series resistance were also checked on the same electrical parameters. The simulations are conducted in standard test conditions with the irradiation normalized as 0.1 W/cm² using the SCAPS-1D platform. The maximum efficiency obtained within the simulation of this device was about 31.86%. For this device, the thickness of the CSGeI₃ layer should be around $900 \mathrm{nm},$ while that of the CsGeI₂Br should be around $100 \mathrm{nm}$ to facilitate optimal absorption of the incident photons. The doping density in the absorber layer is such that in CsGeI₃ should be around ${10}^{18}{ \mathrm{cm}}^{-3}$ and around ${10}^{16}{ \mathrm{cm}}^{-3}$ in the CsGeI₂Brlayer. The defects densities in both layers of the perovskite materials should be around ${10}^{14}{ \mathrm{cm}}^{-3}$. Concerning the HTL, the thickness and the doping density of the P3HT should be around $50 \mathrm{nm}$ and ${10}^{18}{ \mathrm{cm}}^{-3}$, respectively. In terms of the back contact electrode, the work function of the metal should be at least equal to 5 eV, corresponding to gold (Au) metal. The series resistance due to the connection of the cell to the external load should be very small, while the shunt resistance due to the leakage current in the solar cell should be high. Furthermore, the operating temperature of the new PSC should be maintained at an ambient level of around 25 °C in order to deliver high efficiency.

The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2 × 10 ¹⁶ cm ⁻² and 1 × 10 ¹⁶ cm ⁻² respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe ⁺²⁶ ions to a fluence of 8.3 × 10 ¹⁴ cm ⁻² at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm ⁻¹ and 20 keV nm ⁻¹ to fluences below 10 ¹⁴ cm ⁻² . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation.