In this study, a ternary solid solution (0.935 − x )BNT–0.065BT– x Bi(Mn _0.5 Ti _0.5 )O ₃ (BNT–BT–BMnT; x = 0–0.030) was designed and fabricated by means of a conventional fabrication process.

Ferroelectric Na0.52K0.48NbO3 (NKN) thin film on Pt/Ti/SiO2/Si substrate was prepared using the radio frequency magnetron sputtering method. The single phase and grain morphologies of NKN were confirmed by x-ray diffraction and atomic force microscopy analysis, respectively. The remnant polarization Pr and coercive electric field Ec of NKN film were 22.5 μC/cm2 and 90 kV/cm, respectively. The NKN film displayed low frequency dielectric dispersion in the temperature range 25–500 °C. The leakage current density of the film was 3.0×10−7 A/cm2 at 100 kV/cm. The piezoelectric constant d33 was estimated to be 45 pm/V using the piezoelectric force microscopy.

We have fabricated environmental friendly lead-free ferroelectric Na0.5K0.5NbO3 (NKN) and 0.95Na0.5K0.5NbO3–0.05LiNbO3 (0.95NKN-0.05LN) thin films by chemical solution deposition using metal-organic compounds, and studied the effects of LN substitution through the dielectric and ferroelectric properties. The small amount of LN substitution for NKN thin film led to a marked improvement in leakage current properties at the high electric field region. Furthermore, the 0.95NKN-0.05LN thin film (350nm) displayed clear ferroelectricity with well saturated P-E hysteresis loop with 2Pr and 2Ec values of 19.5μC∕cm2 and 91kV∕cm, respectively. The 0.95NKN-0.05LN films will be interesting for applications in lead-free ferroelectric and piezoelectric devices.