Antiferromagnetism within the two-dimensional (2D) family offers a platform for spintronics. The emergent 2D semiconductor ${\mathrm{Cr}\mathrm{PS}}_4$ is proved to be composed of ferromagnetic layers with antiferromagnetic coupling along the stacking direction in the experiment. By using the first-principles quantum-transport simulation, we evaluate the spin-resolved transport in the magnetic tunnel junction built by the 2D ${\mathrm{Cr}\mathrm{PS}}_4$ tunnel barrier with large thickness ranges. We find the magnetoresistance generally increases with the number of tunnel layers from 140% (three layers) to a surprising 370 000% (10 layers). An odd-even oscillation magnetoresistance behavior exists in few layers due to the electrode option. Our results will inspire further experimental verification and provide vital insights for 2D spintronics design.

Interfacial properties of β₁₂phase borophene contacts with other common two-dimensional materials (transition-metal dichalcogenides, group IV-enes and group V-enes) have been systematically studied using a density functional theory (DFT) method.