Haifeng Yu

Dr. Haifeng Yu

Beijing Academy of Quantum Information Sciences, Beijing 100193, China

Research Focus & Metrics

Academic Career Length

5Years (2022-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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13 January 2022 in npj Quantum Information
Verified
Journal Article
Open access
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CWChenlu Wang
Chenlu Wang
XLXuegang Li
Xuegang Li
HXHuikai Xu
Huikai Xu
ZLZhiyuan Li
Zhiyuan Li
JWJunhua Wang
Junhua Wang
HYHaifeng Yu
Haifeng Yu
Here we report a breakthrough in the fabrication of a long lifetime transmon qubit. We use tantalum films as the base superconductor. By using a dry etching process, we obtained transmon qubits with a best T1 lifetime of 503 μs. As a comparison, we also fabricated transmon qubits with other popular materials, including niobium and aluminum, under the same design and fabrication processes. After characterizing their coherence properties, we found that qubits prepared with tantalum films have the best performance. Since the dry etching process is stable and highly anisotropic, it is much more suitable for fabricating complex scalable quantum circuits, when compared to wet etching. As a result, the current breakthrough indicates that the dry etching process of tantalum film is a promising approach to fabricate medium- or large-scale superconducting quantum circuits with a much longer lifetime, meeting the requirements for building practical quantum computers.

20 August 2024 in Nature Physics
Verified
Journal Article
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XDXiaowei Deng
Xiaowei Deng
SLSai Li
Sai Li
ZCZi-Jie Chen
Zi-Jie Chen
ZNZhongchu Ni
Zhongchu Ni
YCYanyan Cai
Yanyan Cai
DYDapeng Yu
Dapeng Yu
Quantum metrology uses non-classical states, such as Fock states with a specific number of photons, to achieve an advantage over classical sensing methods. Typically, quantum metrological performance can be enhanced by increasing the involved excitation numbers, for example, by using large-photon-number Fock states. However, manipulating these states and demonstrating a quantum metrological advantage is experimentally challenging. Here we present an efficient method for generating large Fock states approaching 100 photons within a superconducting microwave cavity through the development of a programmable photon number filter. Using these states in displacement and phase measurements, we demonstrate quantum-enhanced metrology approaching the Heisenberg scaling for 40-photon Fock states and achieve a maximum metrological gain of up to 14.8 dB, highlighting the metrological advantages of large Fock states. Our study could be readily extended to mechanical and optical systems, promising potential applications in weak force detection and dark matter searches.

3 November 2023 in npj Quantum Information
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Journal Article
Open access
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ZLZhiyuan Li
Zhiyuan Li
PLPei Liu
Pei Liu
PZPeng Zhao
Peng Zhao
ZMZhenyu Mi
Zhenyu Mi
HXHuikai Xu
Huikai Xu
HYHaifeng Yu
Haifeng Yu
Implementing arbitrary single-qubit gates with near perfect fidelity is among the most fundamental requirements in gate-based quantum information processing. In this work, we fabricate a transmon qubit with long coherence times and demonstrate single-qubit gates with the average gate error below 10−4, i.e. (7.42 ± 0.04) × 10−5 by randomized benchmarking (RB). To understand the error sources, we experimentally obtain an error budget, consisting of the decoherence errors lower bounded by (4.62 ± 0.04) × 10−5 and the leakage rate per gate of (1.16 ± 0.04) × 10−5. Moreover, we reconstruct the process matrices for the single-qubit gates by the gate set tomography (GST), with which we simulate RB sequences and obtain single-qubit fidelities consistent with experimental results. We also observe non-Markovian behavior in the experiment of long-sequence GST, which may provide guidance for further calibration. The demonstration extends the upper limit that the average fidelity of single-qubit gates can reach in a transmon-qubit system, and thus can be an essential step towards practical and reliable quantum computation in the near future.

5 September 2023 in Nature Communications
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Journal Article
Open access
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ZXZhong-Cheng Xiang
Zhong-Cheng Xiang
KHKaixuan Huang
Kaixuan Huang
YZYu-Ran Zhang
Yu-Ran Zhang
TLTao Liu
Tao Liu
YSYun-Hao Shi
Yun-Hao Shi
Heng FanHeng Fan
Heng Fan
The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with various configurations of Aubry-André-Harper chains and observe dynamical localisation of edge excitations. With these two signatures of topology, our experiments implement the bulk-edge correspondence in the synthetic 2D Chern insulator. Moreover, we simulate two different bilayer Chern insulators on the ladder-type superconducting processor. With the same and opposite periodically modulated on-site potentials for two coupled chains, we simulate topologically nontrivial edge states with zero Hall conductivity and a Chern insulator with higher Chern numbers, respectively. Our work shows the potential of using superconducting qubits for investigating different intriguing topological phases of quantum matter.

28 August 2024 in Journal of Materials Chemistry A
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Journal Article
Closed access
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HYHaifeng Yu
Haifeng Yu
EZErdong Zhang
Erdong Zhang
JYJinxun Yu
Jinxun Yu
SYSongmin Yu
Songmin Yu
YFYaoguo Fang
Yaoguo Fang
Chunzhong LiChunzhong Li
Chunzhong Li
The synergistic doping of divalent Mg 2+ and Ni 2+ ions into a carbon-coated LiMn 0.6 Fe 0.4 PO 4 cathode significantly enhances reaction kinetics and structural stability by mitigating the Jahn–Teller effect and accelerating the Li-ion migration rate.

30 October 2024 in Advanced Materials
Verified
Journal Article
Closed access
HYHaifeng Yu
Haifeng Yu
JCJin Cheng
Jin Cheng
HZHuawei Zhu
Huawei Zhu
LCLing Chen
Ling Chen
CLCheng Lian
Cheng Lian
CLChunzhong Li
Chunzhong Li