Terahertz detection has been highly sought to open a range of cutting‐edge applications in biomedical, high‐speed communications, astronomy, security screening, and military surveillance. Nonetheless, these ideal prospects are hindered by the difficulties in photodetection featuring self‐powered operation at room temperature. Here, this challenge is addressed for the first time by synthesizing the high‐quality ZrGeSe with extraordinary quantum properties of Dirac nodal‐line semimetal. Benefiting from its high mobility and gapless nature, a metal‐ZrGeSe‐metal photodetector with broken mirror symmetry allows for a high‐efficiency photoelectric conversion assisted by the photo‐thermoelectric effect. The designed architecture features ultrahigh sensitivity, excellent ambient stability, and an efficient rectified signal even above 0.26 THz. Maximum responsivity larger than 0.11 A W⁻¹, response time of 8.3 µs, noise equivalent power (NEP) less than 0.15 nW Hz^−1/2, and demonstrative imaging application are all achieved. The superb performances with a lower dark current and NEP less than 15 pW Hz^−1/2 are validated through integrating the van der Waals heterostructure. These results open up an appealing perspective to explore the nontrivial topology of Dirac nodal‐line semimetal by devising the peculiar device geometry that allows for a novel roadmap to address targeted terahertz application requirements.

Effective detection is critical for terahertz applications, yet it remains hindered by the unclear mechanisms that necessitate a deeper understanding of photosensitive materials with exotic physical phenomena. Here, we investigate the terahertz detection capabilities of the two-dimensional antiferromagnetic semimetal NbFeTe₂. Our study reveals that the interaction between antiferromagnetic magnetic moments and electron spin induces disordered carriers to hop between localized states, resulting in a nonlinear increase in responsivity as temperature decreases. We integrate asymmetric electrodes to generate a sufficient Seebeck potential, enabling carriers to overcome the barrier of localized states and achieve reordering at room temperature. Additionally, the self-powered performance of the NbFeTe₂/graphene heterojunction is optimized by the built-in electric field, achieving peak responsivity of 220 V W^-1 and noise equivalent power of <20 pW Hz^-1/2. These results shed light on the potential of antiferromagnetic semimetals in large-area, high-speed imaging applications, marking a significant advancement in terahertz photonics.

The demand for miniaturized and integrated multifunctional devices drives the progression of high‐performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low‐dimensional materials often face challenges due to the limited absorption cross‐section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type‐II van der Waals heterojunction, comprising vertically stacked 2D Ta ₂ NiSe ₅ and the topological insulator Bi ₂ Se ₃ , where the configuration enables polarization‐sensitive, wide‐spectral‐range photodetection. Experimental evaluations at room temperature reveal that the device exhibits a self‐powered responsivity of 0.48 A·W ⁻¹ , a specific directivity of 3.8 × 10 ¹¹ cm·Hz ^1/2 ·W ⁻¹ , a response time of 151 µs, and a polarization ratio of 2.83. The stable and rapid photoresponse of the device underpins the utility in infrared‐coded communication and dual‐channel imaging, showing the substantial potential of the detector. These findings articulate a systematic approach to developing miniaturized, multifunctional room‐temperature infrared detectors with superior performance metrics and enhanced capabilities for multi‐information acquisition.

The integration of mid‐infrared (MIR) photodetectors with built‐in encryption capabilities holds immense promise for advancing secure communications in decentralized networks and compact sensing systems. However, achieving high sensitivity, self‐powered operation, and reliable performance at room temperature within a miniaturized form factor remains a formidable challenge, largely due to constraints in MIR light absorption and the intricacies of embedding encryption at the device level. Here, a novel on‐chip metamaterial‐enhanced, 2D tantalum nickel selenide (Ta₂NiSe₅)‐based photodetector, meticulously designed with a custom‐engineered plasmonic resonance microstructure to achieve self‐powered photodetection in the nanoampere range is unveiled. Gold cross‐shaped resonators are demonstrated that generate plasmon‐induced ultrahot electrons, significantly enhancing the absorption of MIR photons with energies far below the bandgap and boosting electron thermalization in Ta₂NiSe₅, yielding a 0.1 V bias responsivity of 47 mA/W—an order of magnitude higher than previously reported values. Furthermore, the implementation of six reconfigurable optoelectronic logic computing (“AND”, “OR”, “NAND”, “NOR”, “XOR”, and “XNOR”) are illustrated via tailored optical and electrical input‐output configurations, thereby establishing a platform for real‐time infrared‐encrypted communication. This work pioneers a new direction in secure MIR communications, advancing the development of high‐performance, encryption‐capable photonic systems.

The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta₂NiSe₅/WSe₂, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (~3.6 pA), with rise and fall times of 278 μs and 283 μs for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection.