Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics.

A broadband and fabrication-tolerant on-chip scalable mode-division multiplexing (MDM) scheme based on mode-evolution counter-tapered couplers is designed and experimentally demonstrated on a silicon-on-insulator (SOI) platform. Due to the broadband advantage offered by mode evolution, the two-mode MDM link exhibits a very large, $-1\mathrm{dB}$ bandwidth of $>180\mathrm{nm}$, which is considerably larger than most of the previously reported MDM links whether they are based on mode-interference or evolution. In addition, the performance metrics remain stable for large-device width deviations from the designed valued by $-60\mathrm{nm}$ to 40 nm, and for temperature variations from $-25°\mathrm{C}$ to 75°C. This MDM scheme can be readily extended to higher-order mode multiplexing and a three-mode MDM link is measured with less than $-10\mathrm{dB}$ crosstalk from 1.46 to 1.64 μm wavelength range.

We report a phenomenon that an optical beam transmits in a negative direction when passing through a single array of high-refractive-index dielectric nanorods. The mechanism of the negative directional transmission is believed to be due to the symmetry of resonant modes in the dielectric nanoparticles. It is expected to find applications in designing compact optical components to achieve the on-chip beam steering in photonic circuits.

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A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM₀ mode into the TE₁ mode, which will output as the TE₀ mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < −17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology.

Here, we designed a broadband, low loss, compact, and fabrication-tolerant silicon-based four-mode edge coupler, composed of a 1×3 adiabatic mode-evolution counter-taper splitter and a triple-tip inverse taper. Based on mode conversion and power splitting, the proposed structure can simultaneously realize efficient mode coupling from TE0, TM0, TE1, and TM1 modes of multimode silicon waveguides to linearly polarized (LP), LP01,x, LP01,y, LP11a,x, and LP11a,y, modes in the few-mode fiber. To the best of our knowledge, we proposed the first scheme of four LP modes coupling, which is fully compatible with standard fabrication process. The 3D finite-difference time-domain simulation results show that the on-chip conversion losses of the four modes remain lower than 0.62 dB over the 200 nm wavelength range, and total coupling losses are 4.1 dB, 5.1 dB, 2.1 dB, and 2.9 dB for TE0-to-LP01,x, TM0-to-LP01,y, TE1-to-LP11a,x, and TM1-to-LP11a,y, respectively. Good fabrication tolerance and relaxed critical dimensions make the four-mode edge coupler compatible with standard fabrication process of commercial silicon photonic foundries.