Wastewater management is of considerable economic and environmental importance for the dyeing industry. Digital textile printing (DTP), which is based on sublimation transfer and does not generate wastewater, is currently being explored as an inkjet-based method of printing colorants onto fabric. It finds wide industrial applications with most poly(ethylene terephthalate) (PET) and nylon fibers. However, for additional industrial applications, it is necessary to use natural fibers, such as cotton. Therefore, to expand the applicability of DTP, it is essential to develop a novel reactive disperse dye that can interact with the fabric. In this study, we introduced a blocked isocyanate functional group into the dye to enhance binding to the fabric. The effect of sublimation transfer on fabrics as a function of temperature was compared using the newly synthesized reactive disperse dyes with different blocking groups based on pyrazole derivatives, such as pyrazole (Py), di-methylpyrazole (DMPy), and di-tert-butylpyrazole (DtBPy). Fabrics coated with the new reactive disperse dyes, including PET, nylon, and cotton, were printed at 190 °C, 200 °C, and 210 °C using thermal transfer equipment. In the case of the synthesized DHP-A dye on cotton at 210 °C, the color strength was 2.1, which was higher than that of commercial dyes and other synthesized dyes, such as DMP-A and DTP-A. The fastness values of the synthesized DHP-A were measured on cotton, and it was found that the washing and light fastness values on cotton are higher than those of commercial dyes. This study confirmed the possibility of introducing isocyanate groups into reactive disperse dyes.

For HfSiON/SiO ₂ n- type and p- type MOSFETs with a channel length L = 64 nm, the fast relaxation effect of oxide-trapped charges Q _ox during interrupt for bias temperature instability (BTI) degradation measurement were investigated, and a model that compensated for this effect to predict lifetime t _L was proposed. Experimental results show that the fast relaxation of Q _ox during threshold-voltage V _th measurement rapidly saturates within 1 s and is exponentially increasing for gate stress voltage V _g,str and exponentially decreasing for measurement duration t _m but does not affect the BTI degradation mechanism. Using the V _g,str and t _m dependence of Q _ox ’s fast relaxation under BTI stress, t _L prediction model was proposed to compensate the recovery effect by V _th measurement from BTI degradation measured in slow measurement (SM) condition with t _m > 1 μs. The proposed model increases the precision of the estimate of t _L by considering the recovery effect of Q _ox even in SM.