Laser diode (LD) driven lighting is expected to be the next-generation lighting, and red CaAlSiN₃:Eu²⁺ (CASN) phosphor is still required for high-quality LD white lighting. Utilizing glass with a suitable thermal expansion coefficient and low softening temperature as the inorganic binder, CASN phosphor-in-glass-films (PiFs) are fabricated in this work. High efficiency and thermal stability are achieved by optimizing the reaction of CASN and glass. Introducing Lu₃Al₅O₁₂:Ce (LuAG) to offset the luminous spectra of CASN PiFs, broad emission spectra and high efficiency are recorded. High color rendering index (CRI, 88.6), luminous efficiency (LE, 153 lm W⁻¹), and luminous flux (LF, 1162 lm) are achieved simultaneously when the PiFs are excited by a 455 nm blue LD. At last, the high color quality LD white lighting produced by PiFs is displayed for the first time. We believe that the results provided by this work are an enormous progress for PiFs and encourage more researchers to provide new strategies to acquire high performance of PiFs in white LD lighting.

The electron–phonon coupling effect resulting in broad NIR emission in Ca₃Sc₂Si₃O₁₂:Cr³⁺ is revealed for the first time.

By selecting color converters by some standards, such as Lu₂Mg₂Al₂Si₂O₁₂:Ce³⁺ PCP, a high color-rendering index is achieved in laser-driven lighting.

With the same crystal structure and a similar band structure, SnTe is regarded as an eco-friendly alternative to PbTe for the mid-temperature power generation application, but its thermoelectric performance suffers from a relatively low power factor and high thermal conductivity. In this work, we report the synergistic effects of CuI–Mn codoping in SnTe to improve the ZT value. It is found that tiny CuI alloying obviously decreases the carrier mobility and thus reduced the electrical conductivity and electronic thermal conductivity, while Mn doping promotes the valence band convergence and greatly increases the Seebeck coefficient. Moreover, Mn doping introduces many phonon scattering centers including nanoprecipitations, dislocations and point defects, which suppress the lattice thermal conductivity to 0.61 W m⁻¹ K⁻¹ at 800 K. Consequently, the Sn_0.89Mn_0.11Te_0.99(CuI)_0.01 sample exhibits a peak ZT value of 1.42 at 800 K and an average ZT of 0.68 between 300 and 830 K.