We report unidirectional charge transport in a ${\mathrm{NbSe}}_2$ noncentrosymmetric superconductor that is exchange-coupled with a ${\mathrm{CrPS}}_4$ van der Waals layered antiferromagnetic insulator. The ${\mathrm{NbSe}}_2/{\mathrm{CrPS}}_4$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to 16%, with magnetochiral anisotropy reaching $\sim {10}^5{\mathrm{T}}^{–1}{\mathrm{A}}^{–1}$. Furthermore, the ${\mathrm{CrPS}}_4/{\mathrm{NbSe}}_2/{\mathrm{CrPS}}_4$ spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to 40%. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. Finally, it exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime ($<50\mathrm{mT}$) by exploiting the magnetic proximity effect.

Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo-structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe₃GeTe₂ (FGT)/Fe₃GeTe₂ junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I–V curve. Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in the magnetotransport of our homojunction due to the antiparallel magnetic configurations of the two FGT layers. The PMR ratio is found to be ∼0.05% and gets monotonically enhanced as temperature decreases like a metallic giant magnetoresistance. Such a tiny PMR ratio is at least three orders of magnitude smaller than the tunneling magnetoresistance ratio, justifying our clean metallic junction without a spacer. Our findings demonstrate the feasibility of the controllable homostructure and shed light on future spintronics using magnetic vdW materials.

$T{M}_{1/3}M{S}_2$ ($TM=3d$ transition metal, $M=\mathrm{Nb},\mathrm{Ta}$) has recently attracted increasing attention due to its wide variety of fascinating magnetic structures and the chiral arrangement of intercalated $\mathit{TM}$ atoms. We investigated the bulk properties of ${\mathrm{Ni}}_{1/3}\mathrm{Nb}{\mathrm{S}}_2$ and ${\mathrm{Ni}}_{1/3}\mathrm{Ta}{\mathrm{S}}_2$ using magnetization, transport, heat capacity, powder neutron diffraction, and x-ray absorption spectroscopy. ${\mathrm{Ni}}_{1/3}\mathrm{Nb}{\mathrm{S}}_2$ undergoes a phase transition at 84 K, developing an antiferromagnetic helical order with a very long period along the $c$ axis ($33c$). On the other hand, a simple $A$-type spin configuration was observed for ${\mathrm{Ni}}_{1/3}\mathrm{Ta}{\mathrm{S}}_2$ below 158 K, where the spins are aligned to the $c$ axis. These magnetic structures, combined with lattice chirality and metallicity, can lead to various intriguing transport properties, making ${\mathrm{Ni}}_{1/3}\mathrm{Nb}{\mathrm{S}}_2$ and ${\mathrm{Ni}}_{1/3}\mathrm{Ta}{\mathrm{S}}_2$ promising material candidates for future studies on antiferromagnetic spintronics.

Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two‐dimensionality, enabling much smaller devices of novel concepts. One particular exciting direction lies in the current‐driven spin‐orbit torque (SOT). Here, for the first time, all vdW three‐terminal SOT memory is realized, employing the unique physics principle of gigantic intrinsic SOT of Fe₃GeTe₂ (FGT) and the well‐known industry‐adopted tunneling magnetoresistance (TMR) effect. The device operation procedure is designed and the FGT/h‐BN/FGT vdW heterostructure is fabricated as a proof of concept. This device exhibits a classical TMR effect and unambiguously demonstrates the conception by precise performance as expected: the magnetic information of the top‐FGT is written by current‐driven SOT and read out by TMR separately. The writing and reading current paths are physically decoupled, enhancing the design and optimization flexibility substantially and further strengthening the device's endurance naturally. The work will prompt more expansive use of vdW magnets for spintronic applications.