The problem of finding various discrete breathers (DBs) in the $\beta$-Fermi-Pasta-Ulam-Tsingou simple cubic lattice is addressed. DBs are obtained by imposing localizing functions on delocalized nonlinear vibrational modes (DNVMs) having frequencies above the phonon spectrum of the lattice. Among 27 DNVMs with the wave vector at the boundary of the first Brillouin zone there are three satisfying this condition. Seven robust DBs of different symmetries are found using this approach.

This paper presents the results of molecular dynamic modeling, revealing that inserting confined graphene layers into copper crystal reduces the thermal conductivity of the whole composite, and the coefficient of thermal conductivity κ decreases upon an increase in the number of graphene layers. The injection of one, two, and three layers of 15 nm graphene leads to a change in the coefficient of thermal conductivity from 380 W/(m·K) down to 205.9, 179.1, and 163.6 W/(m·K), respectively. Decreasing the length of graphene layers leads to a decrease in the density of defects on which heat is dissipated. With one, two, and three layers of 8 nm graphene, the coefficient of thermal conductivity of the composite is equal to 272.6, 246.8, and 240.8 W/(m·K), appropriately. Meanwhile the introduction of an infinite graphene layer results in the growth of κ to 414.2–803.3 W/(m·K).

A molecular dynamics (MD) simulation method is used to investigate the effect of grain boundary (GB) segregation on the deformation behavior of bicrystals of equiatomic nanoscale CoCrCuFeNi high-entropy alloy (HEA). The deformation mechanisms during shear and tensile deformation at 300 K and 100 K are analyzed. It is revealed that upon tensile deformation, the stacking fault formation, and twinning are the main deformation mechanisms, while for the shear deformation, the main contribution to the plastic flow is realized through the GB migration. The presence of the segregation at GBs leads to the stabilization of GBs, while during the shear deformation of the nanoscale CoCrCuFeNi HEA without the segregation at GBs, GBs are subject to migration. It is found that the GB segregation can differently influence the plasticity of the nanoscale CoCrCuFeNi HEA, depending on the elemental composition of the segregation layer. In the case of copper and nickel segregations, an increase in the segregation layer size enhances the plasticity of the nanoscale CoCrCuFeNi HEA. However, an increase in the thickness of chromium segregations deteriorates the plasticity while enhancing maximum shear stress. The results obtained in this study shed light on the development of HEAs with enhanced mechanical properties via GB engineering.

This work investigates the influence of chemical composition, grain boundary (GB) type, and atomic distribution on the thermal conductivity of Hf–Nb–Ta–Zr refractory high-entropy alloys (RHEAs) via atomistic simulations. Three compositions—equiatomic HfNbTaZr (M1), Hf₁₀Nb₄₀Ta₁₀Zr₄₀ (M2), and Hf₄₀Nb₁₀Ta₄₀Zr₁₀ (M3)—were studied in single-crystalline and bicrystalline models containing Σ3 or Σ5 GBs. The effect of chemical short-range order (SRO) and GB segregation was probed by comparing results for non-relaxed structures with those obtained for corresponding materials relaxed using combined Monte Carlo/molecular dynamics (MC/MD) simulation. Material relaxation is accompanied by the formation of coherent nanoclusters (NbTa in M1, Nb or Zr in M2, Hf or Ta in M3) and Hf/Zr segregation to GBs. In single crystals, SRO reduces thermal conductivity by up to ~2.7% (e.g., from 3.66 to 3.56 W/m·K in M1), which is explained by the phonon scattering effect from matrix–cluster interfaces, densely distributed in the structures. In contrast, in certain bicrystals, the combined effects of GB healing and intragranular cluster coarsening lead to a 6.9% increase in thermal conductivity (from 4.59 to 4.93 W/m·K), despite the presence of high-energy Σ5 GBs. These results demonstrate that the interplay between SRO, GB segregation, and microstructural evolution governs phonon transport in RHEAs, revealing a counterintuitive pathway to enhance thermal conductivity through controlled atomic redistribution.