We report on the thickness d dependences of the Seebeck coefficient, electrical conductivity, and Hall coefficient of PbTe and PbS epitaxial thin films (d=5–200 nm), prepared by thermal evaporation in vacuum and deposition on (001) KCl substrates. The oxidation of the films in air at 300 K leads to a sign inversion of the carrier type from n to p in films with d⩽125 and 110 nm for PbTe and PbS, respectively. The observed d dependences are interpreted in terms of compensating acceptor states created by oxygen on the film surface.

For ${\mathrm{Bi}}_{1-x}{\mathrm{Sb}}_x$ solid solutions $(x=0.01–0.05)$ , the dependences of the electrical conductivity, Hall coefficient, charge carrier mobility, magnetoresistance, Seebeck coefficient, and microhardness on the Sb concentration have been obtained in the temperature range of $77–300\mathrm{K}$ . In the isotherms of these properties, distinct extrema or inflection points have been observed in the range of $x=0.025–0.035$ . The presence of these concentration anomalies is attributed to the critical phenomena, which accompany the transition into a gapless state under increasing Sb concentration.