Thermal rectification can be defined as an asymmetry in the heat flux when the temperature difference between two interacting thermal reservoirs is reversed. In this Letter, we present a far-field radiative thermal rectifier based on high-temperature superconducting materials with a rectification ratio up to 80%. This value is among the highest reported in literature. Two configurations are examined: a superconductor (Tl2Ba2CaCu2O8) exchanging heat with (1) a black body and (2) another superconductor, YBa2Cu3O7 in this case. The first configuration shows a higher maximal rectification ratio. Besides, we show that the two-superconductor rectifier exhibits different rectification regimes depending on the choice of the reference temperature, i.e., the temperature of the thermostat. Presented results might be useful for energy conversion devices, efficient cryogenic radiative insulators engineering, and thermal logical circuits’ development.

We present a thermal rectification device concept based on far-field radiative exchange between two selective emitters. Rectification is achieved due to a large contrast between the two selective emitters’ thermo-optical properties. A simple device constituted by two multilayer samples made of metallic (Au) and semiconductor (Si and HDSi) thin films is proposed. This device shows a rectification ratio increasing with temperature up to 19% for a temperature difference of $\mathrm{\Delta }T=370\mathrm{K}$. Further optimization would allow larger rectification values. The presented results might be useful for energy conversion devices, engineering of smart radiative coolers/insulators, and development of thermal logical circuits.

Among several solutions to exploit solar energy, thermophotovoltaics have been popularized and have known great breakthroughs during the past two decades. Yet, existing systems still have low efficiencies since the wavelength range of optimal photovoltaic (PV) conversion is very small compared to the emitter spectral range. Selective emitters are a very promising solution to this problem. We developed numerical tools to design and optimize such emitters. Some of the resulting structures composed of two or four layers of metals and semiconductors are presented in this paper. We also show that the usual PV devices efficiency limits (30% for crystalline silicon under solar radiation, according to Shockley-Queisser model) can be easily overcome thanks to these structures.