School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Korea
Prof. Heung Cho Ko
School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Korea
Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode–one resistor architectures. Our all-organic one diode–one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode–one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode–one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.
A highly flexible and transparent transistor based on an exfoliated MoS2 channel and CVD-grown graphene electrodes is reported by W.-K. Hong, H. C. Ko, and co-workers on page 3295. Introducing 2D nanomaterials provides high mechanical flexibility (available bending radius: ± 2.2 mm), optical transmittance (74%), and high current on/off ratio (>104) with an average field effect mobility of ≈4.7 cm2 V−1 s−1, all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, the MoS2/graphene interface has a low Schottky barrier of ≈22 meV, which is comparable to the MoS2/metal interface.
Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for ‘stick-&-play’ systems, which provide electronic functions by transfer printing on unconventional complex surfaces.