Hexagonal boron nitride (hBN), as one of the few two-dimensional insulators, holds strategic importance for advancing post-silicon electronic devices and circuits. Achieving wafer-scale, high-quality monolayer hBN is essential for its integration into the semiconductor industry. However, the physical mechanisms behind the chemical vapor deposition (CVD) synthesis of hBN are not yet well understood. Investigating morphology engineering is critical for developing scalable synthetic techniques for the large-scale production of high-quality hBN. In this study, we explored the underlying mechanisms of the CVD growth process of hBN and found that the involvement of a small amount of oxygen effectively modulates the shape of the single-crystal hBN islands. By tuning the oxygen content in the CVD system, we synthesized well-aligned hexagonal hBN islands and achieved a continuous, high-quality single-crystal monolayer hBN film through the merging of these hexagonal islands on conventional single-crystal metal-foil substrates. Density functional theory was used to study the edges of hBN monolayers grown in an oxygen-assisted environment, providing insights into the formation mechanism. This study opens new pathways for controlling the island shape of 2D materials and establishes a foundation for the industrial-scale production of high-quality, large-area, single-crystal hBN.

High-throughput production of highly efficient photocatalysts for hydrogen evolution remains a considerable challenge for materials scientists. Here, we produced extremely uniform high-quality graphene and molybdenum disulfide (MoS₂) nanoplatelets through the electrochemical-assisted liquid-phase exfoliation, out of which we subsequently fabricated MoS₂/graphene van der Waals heterostructures. Ultimately, zinc oxide (ZnO) nanoparticles were deposited into these two-dimensional heterostructures to produce an artificial ZnO/MoS₂/graphene nanocomposite. This new composite experimentally exhibited an excellent photocatalytic efficiency in hydrogen evolution under the sunlight illumination ( $\lambda >400 nm$ ), owing to the extremely high electron mobilities in graphene nanoplatelets and the significant visible-light absorptions of MoS₂. Moreover, due to the synergistic effects in MoS₂ and graphene, the lifetime of excited carriers increased dramatically, which considerably improved the photocatalytic efficiency of the ZnO/MoS₂/graphene heterostructure. We conclude that the novel artificial heterostructure presented here shows great potential for the high-efficient photocatalytic hydrogen generation and the high throughput production of visible-light photocatalysts for industrial applications.

The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with small thickness fluctuations, which is necessary to build electronic devices and circuits. However, CVD-grown 2D materials can contain significant amounts of lattice distortions, which degrades the performance at the device level and increases device-to-device variability. Here we statistically analyse the quality of commercially available CVD-grown hexagonal boron nitride (h-BN) from the most popular suppliers. h-BN is of strategic importance because it is one of the few insulating 2D materials, and can be used as anti-scattering substrate and gate dielectric. We find that the leakage current and electrical homogeneity of all commercially available CVD h-BN samples are significantly worse than those of mechanically exfoliated h-BN of similar thickness. Moreover, in most cases the properties of the CVD h-BN samples analysed don’t match the technical specifications given by the suppliers, and the sample-to-sample variability is unsuitable for the reproducible fabrication of capacitors, transistors or memristors in different batches. In the short term, suppliers should try to provide accurate sample specifications matching the properties of the commercialized materials, and researchers should keep such inaccuracies in mind; and in the middle term suppliers should try to reduce the density of defects to enable the fabrication of high-performance devices with high reliability and reproducibility.

Van der Waals heterostructures based on graphene and hBN layers with different stacking modes are receiving considerable attention because of their potential application in fundamental physics. However, conventional exfoliation fabrication methods and layer‐by‐layer transfer techniques have various limitations. The CVD synthesis of high‐quality large‐area graphene and hBN multilayer heterostructures is essential for the advancement of new physics. Herein, the authors propose an in situ CVD growth strategy for synthesizing wafer‐scale AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures. Single‐crystal CuNi(111) alloys are prepared on sapphire, followed by the pre‐dissolution of carbon atoms. Single‐crystal monolayer hBN is synthesized on a plasma‐cleaned CuNi(111) surface. Then, a single‐crystal monolayer graphene is epitaxially grown onto the hBN surface to form graphene/hBN bilayer heterostructures. A controlled decrease in the growth temperature allows the carbon atoms to precipitate out of the CuNi(111) alloy to form single‐crystal graphene at the interface between hBN and CuNi(111), thereby producing graphene/hBN/graphene trilayer van der Waals heterostructures. The stacking modes between as‐grown 2D layers are investigated through Raman spectroscopy and transmission electron microscopy. This study provides an in situ CVD approach to directly synthesize large‐scale single‐crystal low‐dimensional van der Waals heterostructures and facilitates their application in future 2D‐material‐based integrated circuits.