A fed-batch culture strategy for the production of recombinant Escherichia coli cells anchoring surface-displayed transglucosidase for use as a whole-cell biocatalyst for α-arbutin synthesis was developed. Lactose was used as an inducer of the recombinant protein. In fed-batch cultures, dissolved oxygen was used as the feed indicator for glucose, thus accumulation of glucose and acetate that affected the cell growth and recombinant protein production was avoided. Fed-batch fermentation with lactose induction yielded a biomass of 18 g/L, and the cells possessed very high transglucosylation activity. In the synthesis of α-arbutin by hydroquinone glucosylation, the whole-cell biocatalysts showed a specific activity of 501 nkat/g cell and produced 21 g/L of arbutin, which corresponded to 76% molar conversion. A sixfold increased productivity of whole cell biocatalysts was obtained in the fed-batch culture with lactose induction, as compared to batch culture induced by IPTG.

The SnS/SnS₂ heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS₂ and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS₂ heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10⁻⁴ s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS₂ heterostructure has been increased to 7.31 × 10⁻³ A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS₂ heterostructure. These results indicate an application potential of the layered SnS/SnS₂ heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS₂, and presents an approach for designing high-performance photodetection devices.

This work demonstrates the capability of a van der Waals layered GaTe single crystal to detect a wide range of wavelengths at small power density (0.05 W m ⁻² ) while being operated at a low bias voltage of 0.2 V.