A composite electrode of carbon nanotube CNT@Mn₃O₄ nanocable was successfully synthesized via direct electrophoretic deposition onto a copper foil, followed by calcination. By uniformly depositing Mn₃O₄ nanoparticles on CNTs, a nanocable structure of CNT@Mn₃O₄ can be formed, where the CNT acts as a “highway” for electrons and ions to facilitate fast transportation. Moreover, capacitive energy storage processes play a crucial role in lithium (Li) storage, especially during high scan rates. The significant contribution of capacitance is highly advantageous for the rapid transfer of Li⁺ ions, which ultimately results in an improved reversible capacity and prolonged cycle stability of the battery. A high specific capacity of 1367 mAh g⁻¹ was maintained over 300 charge–discharge cycles at a current density of 1 A g⁻¹, indicating excellent capacity retention and an extended cycle life. Furthermore, the synthesis process was facile and cost-effective, obviating the need for complex procedures such as mixing and pasting. Additionally, no binder was required, thereby enhancing battery quality efficiency.

Poor selectivity is one of the main bottlenecks restricting the development of metal oxide semiconductor (MOS) sensors. In this paper, using hydrogen cyanide (HCN) as the target gas, CeMnOx as the catalytic layer material and Pt@SnO₂ as the gas-sensitive layer material, we have proposed a scheme to improve the selectivity of a catalytic layer/gas-sensitive layer-laminated MOS sensor under dynamic temperature modulation. We tested HCN and 12 kinds of battlefield environment simulation gases, and the results showed that the CeMnOx/Pt@SnO₂ sensor, under the condition of temperature dynamic modulation (a constant temperature of 400 °C for the gas-sensitive layer and a variable temperature of room temperature to 400 °C for the catalytic layer; the heating and cooling rates were 200 °C/s, the highest temperature was maintained for 2 s, and the lowest temperature was maintained for 2 s), distinct characteristic peaks appeared on the G-T curves of the resistance response to HCN only. The quantification of the characteristic peaks was performed by peak heights, and the peak height of 5 mg/m³ HCN was obtained up to 0.104, while the peak heights of the other gases at the same concentration were up to 0.034. The peak height of HCN was significantly higher than that of other gases, which verified the high selectivity of the sensor for HCN. Meanwhile, the sensor also showed good sensitivity, response/recovery time, stability and anti-interference for HCN under the above temperature dynamic modulation. This work provides an important reference for the selectivity improvement of MOS sensors for HCN.

The poor selectivity of metal oxide semiconductor sensors is a major constraint to their application in the detection of chemical warfare agents. We prepared a (Pt+Pd+Rh)@Al₂O₃/(Pt+Rh)-WO₃ sensor by using (Pt+Pd+Rh)@Al₂O₃ as a catalytic film material and (Pt+Rh)-WO₃ as a gas-sensitive film material. Using temperature dynamic modulation, the (Pt+Pd+Rh)@Al₂O₃/(Pt+Rh)-WO₃ sensor was realised to improve the selectivity for mustard. Due to the catalytic effect of the (Pt+Pd+Rh)@Al₂O₃ catalytic film on mustard, mustard was able to be catalytically generated into mustard sulphoxide after passing through the (Pt+Pd+Rh)@Al₂O₃ catalytic film. Under a certain temperature dynamic modulation, the mustard concentration on the surface of the (Pt+Rh)-WO₃ gas-sensitive film showed an increase and then a decrease. Since the resistance response of the (Pt+Rh)-WO₃ gas-sensitive film to mustard was much higher than that of mustard sulphoxide, the change in the resistance of the (Pt+Rh)-WO₃ gas-sensitive film was mainly determined by the change in the concentration of mustard, which led to the peak signal in the curve of its resistance response to mustard. The experimental results showed that the (Pt+Pd+Rh)@Al₂O₃/(Pt+Rh)-WO₃ sensor had peak signals in the resistance response to mustard only, and not in the resistance response to 12 interfering gases, such as carbon monoxide.