This study reports the effect of annealing temperature on the structural, morphological, and optical properties of ZnO (Zinc Oxide) thin films deposited on a glass substrate by the sol-gel spin coating method. Those properties of ZnO were examined with UV-Vis, Fourier transform infrared (FTIR) and Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray diffraction (XRD), before and after annealing. XRD results revealed that all the samples had a highly c-axis oriented wurtzite structure. A 1 (LO) mode in Raman spectra also confirmed the highly oriented ZnO films. Optical measurement indicated that transmittance of the films was above %85, and the optical band gap slightly decreased with the increasing annealing temperature from 350 to 550 °C. Morphological analysis displayed that increasing annealing temperature improved surface morphology and enlarged the grain size from 2-3 nm for as-deposited samples to 150 nm for annealed at 550 °C.

In this study, Bi-doped ZnO and undoped ZnO nanomaterials have been synthesized by the solvothermal reaction method. The effect of Bi doping on the structural and electrochemical properties has been investigated by X-ray diffractions (XRD), X-ray photoelectron spectroscopy (XPS) and, scanning electron microscopy (SEM). As seen from X-ray diffraction spectra performed on the bulk material, it has been clearly observed that both Bi doping changed the preferred orientation of the nanopowder as (101) and Bi+3 ions were expectedly entered the lattice. Furthermore, this result has been supported by photoelectron spectra. Scanning electron microscopy images have shown the shapes and distributions of nanostructures of the samples. As a result, it is thought that Bi doping is suitable for obtaining p-type conductivity in ZnO materials for the experimental processes we applied to samples in the study.