We study the dynamic ac conductivity of a nonequilibrium two-dimensional electron-hole system in optically pumped graphene. Considering the contribution of both interband and intraband transitions, we demonstrate that at sufficiently strong pumping the population inversion in graphene can lead to the negative net ac conductivity in the terahertz range of frequencies. This effect might be used in graphene-based coherent sources of terahertz radiation.

Plasma waves in the two-dimensional electron-hole system in a graphene-based heterostructure controlled by a highly conducting gate are studied theoretically. The energy spectra of two-dimensional electrons and holes are assumed to be conical (neutrinolike), i.e., corresponding to their zero effective masses. Using the developed model, we calculate the spectrum of plasma waves (spatio-temporal variations of the electron and hole densities and the self-consistent electric potential). We find that the sufficiently long plasma waves exhibit a linear (soundlike) dispersion, with the wave velocity determined by the gate layer thickness, the gate voltage, and the temperature. The plasma wave velocity in graphene heterostructures can significantly exceed the plasma wave velocity in the commonly employed semiconductor gated heterostructures. The gated graphene heterostructures can be used in different voltage tunable terahertz devices which utilize the plasma waves.

Graphene is a one-atom-thick planar sheet of a honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to nontrivial features such as giant carrier mobility and broadband flat optical response. In this paper, recent advances in graphene-based devices in terahertz science and technology are reviewed. First, the fundamental basis of the optoelectronic properties of graphene is introduced. Second, synthesis and crystallographic characterization of graphene material are described, particularly focused on the authors' original heteroepitaxial graphene-on-silicon technology. Third, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene are described to introduce a possibility of negative-dynamic conductivity in a wide terahertz range. Fourth, recent theoretical advances towards the creation of current-injection graphene terahertz lasers are described. Fifth, the unique terahertz dynamics of the two-dimensional plasmons in graphene are described. Finally, the advantages of graphene devices for terahertz applications are summarized.

We report, within a picosecond time scale, fast relaxation and relatively slow recombination dynamics of photogenerated electrons and holes in an exfoliated graphene under infrared pulse excitation. We conduct time-domain spectroscopic studies using an optical pump and terahertz probe with an optical probe technique and show that graphene sheet amplifies an incoming terahertz field. The graphene emission spectral dependency on laser pumping intensity shows a threshold-like behavior, testifying to the occurrence of the negative conductivity and the population inversion. The phase behavior of the measured terahertz electric field also shows clear Lorentzian-like normal dispersion around the gain peak, testifying to the amplification that can be attributed to stimulated emission of photocarriers in the inverted states. The emission spectra clearly narrow at a longer terahertz probe delay time, giving evidence that the quasi-Fermi energy moves closer to the equilibrium at this longer terahertz probe delay time.

We analyze the surface plasmons (SPs) propagating along optically pumped single-graphene layer (SGL) and multiple-graphene layer (MGL) structures. It is shown that at sufficiently strong optical pumping when the real part of the dynamic conductivity of SGL and MGL structures becomes negative in the terahertz (THz) range of frequencies due to the interband population inversion, the damping of the THz SPs can give way to their amplification. This effect can be used in graphene-based THz lasers and other devices. Due to the relatively small SP group velocity, the absolute value of their absorption coefficient (SP gain) can be large, substantially exceeding that of optically pumped structures with dielectric waveguides. A comparison of SGL and MGL structures shows that to maximize the SP gain the number of graphene layers should be properly chosen.