Haengseon Lee

Haengseon Lee


Research Focus & Metrics

Academic Career Length

29Years (1998-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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31 July 2023 in Remote Sensing
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Journal Article
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JLJunghan Lee
Junghan Lee
HLHaengseon Lee
Haengseon Lee
SKSung-Hyub Ko
Sung-Hyub Ko
DJDaeHyeong Ji
DaeHyeong Ji
JHJong-Wu Hyeon
Jong-Wu Hyeon
We modeled and implemented a joint airborne system integrating ground penetrating radar (GPR) and magnetometer (MAG) models specifically for landmine detection applications. We conducted both simulations and experimental analyses of the joint airborne GPR and MAG models, with a focus on detecting the metallic components of different types of landmines, including antitank (AT) M15 metallic, antipersonnel (AP) M16 metallic, and AT M19 plastic (minimum-metal) landmines. The GPR model employed the finite-difference time-domain (FDTD) method and was evaluated using a singular value decomposition (SVD) and Kirchhoff migration (KM) with matched filtering (MF). These advanced techniques enabled the automatic identification and precise focusing of the reflected hyperbolic signals emitted by the landmines while considering cross-range resolution. Additionally, the MAGs were utilized based on the magnetic dipole model with a de-trend and a spatial median filtering method to estimate the magnetic anomaly of the landmines while considering various data spatial intervals. The joint airborne GPR and MAG system was implemented by combining and integrating the GPR and MAG models for experimental validation. Through this comprehensive approach, which included experiments, simulations, and data processing, the design parameters of the final system were obtained. These design parameters can be used in the development and application of landmine detection systems based on airborne GPR and MAG technology.

1 January 2009 in Progress In Electromagnetics Research
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HLHaengseon Lee
Haengseon Lee

1 January 2009 in Progress In Electromagnetics Research
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Journal Article
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HKHayeon Kim
Hayeon Kim
HLHaengseon Lee
Haengseon Lee

26 October 2012 in IEEE Transactions on Electromagnetic Compatibility
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Journal Article
Closed access
HPHyun Ho Park
Hyun Ho Park
HPHark-Byeong Park
Hark-Byeong Park
HLHaengseon Lee
Haengseon Lee
When a mobile device is connected to cables for charging power or transmitting data, the radiated emission from the attached cables, which are typically effective electromagnetic interference (EMI) antennae at certain frequencies, can cause serious system-level EMI problems. The measurement of system-level radiation during compliance and precompliance tests is not only a time-consuming task, but also requires expensive facilities such as a semianechoic chamber. This paper proposes a simple method of predicting far-field radiation from cables attached to mobile devices at the early stage of the design and development phase without using an EMI chamber. The method combines radiation characterization of a simple box-source-cable geometry using full-wave simulations with the measurement of the real common-mode current flowing through the cable. The proposed method was applied to mobile phones to estimate the far-field radiated emissions, which were compared with the measurement results. The accuracy of the predicted results was evaluated using the feature selective validation technique, indicating good agreement and correlation.

29 March 2002 in Journal of Applied Physics
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HLHaengseon Lee
Haengseon Lee
JLJ. Y. Lee
J. Y. Lee
TKT. W. Kim
T. W. Kim
DLD. U. Lee
D. U. Lee
DCD. C. Choo
D. C. Choo
MKM. D. Kim
M. D. Kim
The microstructural and the optical properties of InAs/GaAs quantum-dot (QD) arrays inserted into undoped GaAs barriers embedded in an AlxGa1−xAs/GaAs were investigated by using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images and the selected-area electron diffraction patterns showed that vertically stacked InAs QD self-assembled arrays were embedded in the GaAs barriers. The temperature-dependent PL spectra showed that the peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band of the InAs QDs shifted to lower energy with increasing temperature. The PL intensity of the InAs dots was significantly enhanced by the modulation-doped AlxGa1−xAs/GaAs heterostructure, and the thermal activation energy of the InAs dots was decreased by the addition of the modulation-doped AlxGa1−xAs/GaAs heterostructure. The present results can help to improve the understanding of the microstructural and the optical properties in InAs QD arrays inserted into GaAs barriers embedded in a modulation-doped AlxGa1−xAs/GaAs heterostructure.

1 March 1999 in IEEE Transactions on Microwave Theory and Techniques
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HLHaengseon Lee
Haengseon Lee
HEH.J. Eom
H.J. Eom