A novel three-axis sensor for simultaneous and independent magnetic-field components measurement based on the Hall effect has been implemented and tested. On the upper side of n-Si substrate, a 10 colonm deep rectangular- shaped p-ring sized 50 x 160 colonm² has been formed. In the n-zone surrounded by p-well, through six ohmic contacts, two parallel-field Hall devices for in-plane BB_x and BB_y components registration and one orthogonal Hall element for B_z detection has been functional integrated. The 3D magnetometer has been fabricated using silicon planar technology. The experimentally obtained magnetosensitivities are S_x ≈ 41 V/AT, S_y ≈ 43 V/AT and S_z ≈ 49 V/AT, the cross- sensitivity reaches no more than 3%, the non-linearity is 1–2%, the noise spectral density on all outputs at frequency f ≤ 1000 Hz is of the 1/f type and the sensor detectivity is BB_min ≈ 21 colonT. The spatial resolution is 50 x 160 x 10 μm³.

A novel single-chip 3-D multidimensional device for subsequent measurement of the three orthogonal magnetic-field components using one and the same transducer zone is presented. Six ohmic planar contacts on silicon substrate are implemented both as supply and four to obtain the full information about the vector components by three successive coupling arrangements realizing two in-plane sensitive and one orthogonal Hall effect devices. The proposed approach employs the same element, but at different time. The sensor operation is determined by the direction of individual parts of nonlinear carriers’ trajectory in the substrate and the Lorentz force action on them. The effective sensor resolution is 90x60x30 μm³. The respective channel- magnetosensitivities consists S_x ≈ 35 V/AT, S_y ≈ 26 V/AT, and S_z ≈ 18 V/AT, the channel cross-talk at induction B ≤ 1 T reaches no more than 3% and the lowest detected magnetic field of the three channels is about 10 μT in the frequency range f ≤ 10² Hz.

A novel functional multisensor for temperature and subsequent measurement of three orthogonal magnetic-field components using the same transducer zone is presented. One central emitter, two symmetrically positioned base contacts and two pairs of output ohmic terminals on a silicon substrate, close to the bases, are implemented. Three subsequent coupling arrangements of the output terminals use the same element at different times. Temperature is measured through the voltage on the forward biased p⁺-n emitter junction at constant supply current. The channel sensitivities are S_x = 7 V/AT, S_y = 9 V/AT and S_z = 11.3 V/AT. The thermo-sensitivity is K_EB = 1.82 mV/°C at supply current of 1 mA. Magnetic induction does not perturb thermometric voltage within a wide range, - 0.8 T ≤ B ≤ 0.8 T. The spatial resolution reaches about 110 х 90 х 40 μm³.