To improve the sensitivity and stability, a novel mode-localization resonant MEMS (Micro-Electro-Mechanical System) electric field sensor based on closed-loop feedback is presented in this paper. The sensor is based on the principle that the mode localization effect can dramatically increase the sensitivity of a resonant system. Moreover, in order to detect the electric field in real-time and improve the resolution and stability of the sensor, closed-loop feedback is introduced. One of the output signals of the sensor is fed back to the input port, where the output signal has been processed by a phase-locked loop part and automatic gain control part. This paper analyzes amplitude-frequency characteristics, phase-frequency characteristics, sensitivity, and output characteristics by modeling, theoretical calculation, and finite element simulation. The device prototype is fabricated based on SOI process. Tested in vacuum conditions, the minimum detectable electrostatic field of the sensor is better than 10V/m, the accuracy of the sensor is 5.3%, and the repeatability is 0.56%.

The paper presents a novel non-contact microelectromechanical systems (MEMS) voltage sensor based on the piezoresistive effect of single-crystal silicon. The novelty of the proposed sensor design lies in the implementation of unique single-crystal silicon piezoresistive beams for voltage measurement. The sensitive structure of the sensor produces electrostatic force deformation due to the measured voltage, resulting in the resistance change of single-crystal silicon piezoresistive beams which support a vibrating diaphragm. The voltage can be measured by sensing the resistance change. Moreover, the sensor does not need an additional driving signal and has lower power consumption. The prototype of the sensor was fabricated using an SOI micromachining process. The piezoresistive characteristics of the sensor and the corresponding output response relationship were analyzed through theoretical analysis and finite element simulation. The voltage response characteristics of the sensor were achieved at power frequencies from 50 Hz to 1000 Hz in the paper. The experimental results showed that they were in good agreement with simulations results with the theoretical model and obtained good response characteristics. The sensor has demonstrated that the minimum detectable voltages were 1 V for AC voltages at frequencies from 50 Hz to 300 Hz and 0.5 V for AC voltages at frequencies from 400 Hz to 1000 Hz, respectively. Moreover, the linearities of the sensor were 3.4% and 0.93% in the voltage measurement range of 900–1200 V at the power frequency of 50 Hz and in the voltage measurement range of 400–1200 V at the frequency of 200 Hz, respectively.

In order to enhance the sensitivity of wafer-level vacuum-packaged electric field sensors, this paper proposed a vertical-resonant MEMS electric field sensor based on TGV (Through Glass Via) technology. The microsensor is composed of the electric field sensing cover, the drive cover, and the SOI-based microstructures between them. TGV technology is innovatively used to fabricate the electric field sensing cover and the vertically-driven cover. The external electric field is concentrated and transmitted to the area below the silicon plate in the center of the electric field sensing cover through a metal plate and a metal pillar, reducing the coupling capacitance between the silicon plate and the packaging structure, thereby achieving the enhanced transmission of the electric field. The sensitivity-enhanced mechanism of the sensor is analyzed, and the key parameters of the sensor are optimized through finite element simulation. The fabrication process is designed and realized. A prototype is tested to characterize its performance. The experimental results indicate that the sensitivity of the sensor is 0.82 mV/(kV/m) within the electrostatic electric field ranging from 0–50 kV/m. The linearity of the sensor is 0.65%.

This paper proposes a highly sensitive and high-resolution resonant MEMS electrostatic field sensor based on electrostatic stiffness perturbation, which uses resonant frequency as an output signal to eliminate the feedthrough interference from the driving voltage. The sensor is composed of a resonator, driving electrode, detection electrode, transition electrode, and electrostatic field sensing plate. The working principle is that when there is an electrostatic field, an induction charge will appear at the surface of the electrostatic field sensing plate and induce electrostatic stiffness on the resonator, which will cause a resonant frequency shift. The resonant frequency is used as the output signal of the microsensor. The characteristics of the electrostatic field sensor are analyzed with a theoretical model and verified by finite element simulation. A device prototype is fabricated based on the Silicon on Insulator (SOI) process and tested under vacuum conditions. The results indicate that the sensitivity of the sensor is $0.1384\sqrt{\mathrm{Hz}}/\left(\mathrm{kV}/\mathrm{m}\right)$ and the resolution is better than 10 V/m.